M A COM MA4P274-1225T, MA4P274-1225 Datasheet

Quad PIN Diode π Attenuator

5 –3000 MHz

MA4P274-1225T

Features

n 4 PIN Diodes in SOT-25 Plastic Package
n Externally Selectable Bias and RF Match Network
n 5 – 3,000 MHz Useable Frequency Band
n + 43 dBm IP3@ 1 GHz (50 Ω)
n 1.0 dB Loss @ 1 GHz (50 Ω)
n 30 dB Attenuation @ 1 GHz (50 Ω)

Description

M/A-COM's MA4P274-1225 is a wideband, lower insertion
loss, high IP3, Quad PIN Diode π Attenuator in a low-cost,
surface mount SOT-25 package. Four PIN Diodes in one
package reduce design parasitics and improve circuit
density.

Applications

These PIN Diode Attenuators perform well where RF
Signal Amplitude Control is required in 50 Ω Handset
Circuits and 75 Ω Broadband CATV Systems. Exceptional
Insertion Loss, Attenuation Range, and IP3 at <10 mA bias
make these devices suitable for better power level control in
RF Amplifiers.

Package Outline (Topview)

3 2 1

Topview

4

5

PIN Configuration

PIN Function PIN Function

1 RF In 4 Shunt 1 Bias
2 Series

Bias

3 RF Out

5 Shunt 2 Bias

Guaranteed Electrical Specifications: @ +25 °C

Parameter Test Conditions Units Min. Typ. Max.

Ct @ 0 V 100 MHz pF 0.45 0.50

Rs @ 1 mA 100 MHz

Rs @ 10 mA 100 MHz

Vb D.C. V 125 150

Minority Carrier

Lifetime

Power

Dissipation

RF Incident

Power

( 50 % - 90 % ) Voltage

If = + 10mA, Ir = - 6mA Pulse

@ 100 kHz Sq Wave

D.C. and F = 5 – 3,000 MHz

Derate linearly to 0 mW at 125 C

Using 1,000 deg-C/W

Thermal Resistance

F = 5 – 3,000 MHz

Vshunt 1 & 2 Diode Bias = 0.75 V

Vseries Diode Bias = 0 to 20 V

Ω
Ω

nS 1000 2000

mW 100

dBm + 20

13 18

2.3 3.0

Quad PIN Diode π Attenuator

PIN 1:

RF In

Series Bias

RF Out

Functional Schematic

MA4P274-1225, V 3.00

MA4P274-1225T

PIN 3:

PIN 4 :
Shunt 1 Bias

Case Style: SOT 25

Dim Inches

Min. Max. Min. Max.
A .1103 .1181 2.80 3.10
B .1023 .1181 2.6 3.00

C 0.0355 .0512 0.9 1.30
D 0.0591 .0669 1.5 1.70
E .0374 REF.
F .0138 .0197 .35 .50
G .0031 0.0079 .08 0.2
H .0002 .0059 .05 .15

J .0138 .0216 .35 .55

Millimeters

0.95 REF.

PIN 2:

PIN 5 :
Shunt 2 Bias

Absolute Maximum Ratings1

Parameter Absolute Maximum

Operating Temperature
Storage Temperature,

No Dissipated Power
DC Voltage at Temperature

Extremes
DC Current at 25 °C

Mounting Temperature

1. Exceeding any one or combination of these limits may cause
permanent damage.

-65 °C to +125 °C

-65 °C to +150 °C

-100 V

75 mA

+235 °C for 10 seconds

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

1. Dimensions do not include mold peaks, protrusion or
gate burrs which shall not exceed 0.0098 in.
(.25) mm per side.

2. Leads Coplanarity should be 0.003 (0.08) mm Max.

2

Quad PIN Diode π Attenuator

Typical 50 Ω SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )

Parameter Frequency Range Test Conditions Units Min. Typ. Max.

Insertion Loss 5 – 1,000 MHz

Insertion Loss 5 – 1,000 MHz

Return Loss 5 – 1,000 MHz

Attenuation 5 – 1,000 MHz

Input IP3 5 – 1,000 MHz

Input IP3 5 – 1,000 MHz

Input IP3 5 – 1,000 MHz

Input IP3 5 – 1,000 MHz

Settling Time 5 – 1,000 MHz Within 1 dB of Final Attenuation Value

RF C.W. Incident

Power

5 – 1,000 MHz 0 – 20 V Series Diode Bias

+ 3 mA / Series Diode

and 0.75 V Shunt 1 and 2 Bias

F = 1 GHz

+ 6.5 mA / Series Diode

and 0.75 V Shunt 1 and 2 Bias

F = 1 GHz

+ 6.5 mA / Series Diode

and 0.75 V Shunt 1 and 2 Bias

F = 1 GHz

0 mA / Series Diode

and 0.75 V Shunt 1 and 2 Bias

F = 1 GHz

0 mA / Series Diode

and 0.75 V Shunt 1 and 2 Bias

F1 = 1000 MHz, F2 = 1100 MHz

+ 6.5 mA / Series Diode

and 0.75 V Shunt 1 and 2 Bias

F1 = 1000 MHz, F2 = 1100 MHz

0 mA / Series Diode

and 0.75 V Shunt 1 and 2 Bias

F1 = 100 MHz, F2 = 110 MHz

+ 6.5 mA / Series Diode

and 0.75 V Shunt 1 and 2 Bias

F1 = 100 MHz, F2 = 110 MHz

F = 1 GHz

and 0.75 V Shunt 1 and 2 Bias

MA4P274-1225, V 3.00

dB -2.0

dB -1.0

dB -10

dB -29

dBm 43

dBm 43

dBm 43

dBm 33

uS 3

dBm + 20

MA4P274-1225T

Typical 75 Ω SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )

Parameter Frequency Range Test Conditions Units Min. Typ. Max.

Insertion Loss 5 – 1,000 MHz

Insertion Loss 5 – 1,000 MHz

Attenuation 5 – 1,000 MHz

Return Loss 5 – 1,000 MHz

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

+ 2 mA / Series Diode

and 1.0 V Shunt 1 and 2 Bias

+ 4.5 mA / Series Diode

and 1.0 V Shunt 1 and 2 Bias

0 mA / Series Diode

and 1 V Shunt 1 and 2 Bias

+ 4.5 mA / Series Diode

and 1.0 V Shunt 1 and 2 Bias

dB -1.1

F = 1 GHz

dB -0.6

F = 1 GHz

dB -27

F = 1 GHz

dB -10

F = 1 GHz

3

Quad PIN Diode π Attenuator

Frequency @ 0 V

1.00

1000

MA4P274-1225, V 3.00

MA4P274-1225T

MA4P274-1225 Diode Rs vs I MA4P274-1225 Diode Ct vs

100 MHz

0.10

1.00 10.00 100.00 1000.00 10000.00

F ( MHz )

MA4P274-1225 Attenuation vs Frequency in
50 Ohms, Shunt Bias = 0.75 V

-5

-15

-25

Series Diode: 10 V

Series Diode: 0 V

-35

-45

-55

-65
50 150 250 350 450 550 650 750 850 950

Frequency ( MHz )

Series Diode: 5 V

Series Diode: 1 V

RS vs. IF @ 100 MHz and 1 GHz

100

10

1

0.01 0.10 1.00 10.00 100.00

4 MHz

900 MHz

I ( mA )

MA4P274-1225 Return Loss vs Frequency in
50 Ohms, Shunt Bias = 0.75 V

0

-5

-10

Series Diode: 1 V

-15

Series Diode: 0 V

-20

-25
50 150 250 350 450 550 650 750 850 950

Series Diode: 2 V

Series Diode: 3 V

Series Diode: 5

Series Diode: 10 V

Frequency ( MHz )

LS vs. Frequency @ 10 mA

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

4

Quad PIN Diode π Attenuator

MA4P274-1225 IP3 vs Series Voltage,
Vshunt = .075 V

60

55

50

45

40

35

30

25

20

0 2 4 6 8 10 12 14 16 18 20

F1 = 1000 MHz, F2 = 1100 MHz

F1 = 100 MHz, F2 = 110 MHz

Series Diode Voltage ( V )

MA4P274-1225, V 3.00

MA4P274-1225T

MA4P274-1225 Insertion Loss vs Frequency in 75
Ohms, Shunt Bias = 1 V

-1.4

-1.2

Series Current per Diode = 2 mA

-1

-0.8

Series Current per Diode = 4.5 mA

-0.6

-0.4

-0.2

0

20.00 142.50 265.00 387.50 510.00 632.50 755.00 877.50 1000.00

Frequency (MHz)

MA4P274-1225 Attenuation vs Frequency in
75 Ohms, Shunt Bias = 1 V

-70

-60

-50

-40

-30

-20

-10

0

20.00 142.50 265.00 387.50 510.00 632.50 755.00 877.50 1000.00

Series Diode: 0.5 V

Series Diode: 0.7 V

Series Diode: 1 V

Series Diode: 2 V

Series Diode: 3 V

Series Diode: 20 V

Frequency (MHz)

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

5

Quad PIN Diode π Attenuator

PIN 1:

RF In

RF Out

Series Bias

5 - 1,000 MHz Wideband RF Circuit

10K pF 10K pF

PIN 3:

1 K ohms

MA4P274-1225, V 3.00

MA4P274-1225T

10K pF

PIN 2:

1 K ohms

10K pF

1 K ohms

X2

PIN 4 :
Shunt 1 Bias

Note : Keeping PIN 4 & PIN 5 as Separate Bias Points ( Same V ) reduces RF leakage ( increases attenuation ) through an
otherwise connected Common Anode Bias Node.

PIN 5 :
Shunt 2 Bias

10 - 1,000 MHz Wideband RF Circuit Parts List

Item Supplier Supplier P/N

4003 or 4350 Circuit Board
4003 ( εr = 3.38), 4350 ( εr = 3.48 )

Capacitor, 10 K pF

3.2 mm L x 1.6 mm W x 1.15 mm H
Resistor, 1K Ω

1.0 mm L x 0.5 mm w x 0. 25 mm H

Rogers Corporation
www.rogers-corp.com

Murata
www.murata.com
Piconics
www.piconics.com

RO4003 , RO4350

GRM42-6COH103K25PB
C1001BC42KSA

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

6

Quad PIN Diode π Attenuator

Series and Shunt Diode Bias Currents as a Function of Vseries and
Vshunt Voltage Using Wideband RF Circuit

(Values shown are PER DIODE )

MA4P274-1225, V 3.00

MA4P274-1225T

Vshunt Bias ( V ) Vseries Bias ( V ) Iseries Diode ( mA )

0.75 0 0.000

0.75 1 0.106

0.75 2 0.443

0.75 3 0.773 0

0.75 4 1.099 0

0.75 5 1.426 0

0.75 6 1.750 0

0.75 7 2.092 0

0.75 8 2.424 0

0.75 9 2.756 0

0.75 10 3.088 0

Ishunt Diode ( mA )

0.192

0.120

0.048

0.75 11 3.421 0

0.75 12 3.754 0

0.75 13 4.087 0

0.75 14 4.410 0

0.75 15 4.743 0

0.75 16 5.081 0

0.75 17 5.406 0

0.75 18 5.750 0

0.75 19 6.079 0

0.75 20 6.413 0

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

7

Quad PIN Diode π Attenuator

PIN 1:

RF In

RF Out

Vc = 0

–

5 V

1 – 3 GHz 50 Ω, Higher Frequency, Lower Tuning Voltage RF Circuit

MA4P274-1225, V 3.00

MA4P274-1225T

PIN 3:

0.1 uF

56 pF

330 ohms

56 pF

PIN 4 :
Shunt 1 Bias

56 pF

22 nH

PIN 2: Series Bias

100 ohms

330 ohms

22 nH

22 nH

680 pF
( 2 X )

1 K ohms 1 K ohms

+ 5 V

56 pF

56pF

PIN 5 :
Shunt 2 Bias

0.1 uF

Note : Keeping PIN 4 & PIN 5 as Separate Bias Points ( Same V ) reduces RF leakage through an otherwise connected
Common Anode Bias Node.

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

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180 ohms 180 ohms

8

Quad PIN Diode π Attenuator

1 - 3 GHz Higher Frequency RF Circuit Parts List

Item Supplier Supplier P/N

MA4P274-1225, V 3.00

MA4P274-1225T

4003 or 4350 Circuit Board
4003 ( εr = 3.38), 4350 ( εr = 3.48 )

Capacitor, .01 uF, Power Supply Filter

1.6 mm L x 0.80 mm W x .080 mm H
Capacitor, 680 pF, Diode RF Bypass

2.0 mm L x 1.5 mm W x .085 mm H
Capacitor, 56 pF, D.C. Block,

RF Decoupling

1.0 mm L x 0.5 mm W x 0.5 mm H
Inductor, 22 nH, RF Choke

Resistor, 100 Ω

1.0 mm L x 0.5 mm w x 0. 25 mm H
Resistor, 180 Ω

1.0 mm L x 0.5 mm w x 0. 25 mm H
Resistor, 330 Ω

1.0 mm L x 0.5 mm w x 0. 25 mm H
Resistor, 1K Ω

1.0 mm L x 0.5 mm w x 0. 25 mm H

Rogers Corporation
www.rogers-corp.com

Murata
www.murata.com

Murata GRM40COG681K50PB

Murata GRM36COG560K50PB

Coilcraft
www.coilcraft.com

Piconics
www.piconics.com

Piconics C1800BC42KSA

Piconics C3300BC42KSA

Piconics

RO4003 , RO4350

GRM39X7R104K25PB

1812SMS-22NJ

C1001BC42KSA

C1001BC42KSA

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

9

Quad PIN Diode π Attenuator

P2

P1

C

C C9

L L3

L L2

L L1

L L4

R R1

C C5

C C4

C C8

R R4

C C3

R R2

C C2

C C1

R R3

C C6

C C7

wBV

Af=1

2

Tau=1.0

usec

Lumped Model of SOT-25, MA4P274-1225 PIN Diode π Quad Attenuator

Port

Num=1

L=0.8 nH

C=0.27pF

L=0.8 nH

C=0.27 pF

MA4P274-1225, V 3.00

MA4P274-1225T

Port

Num=2

C=0.27 pF

C=0.05 pF

R=Rjsh Ohm

L=0.8 nH

C=0.05pF

R=Rjse Ohm

C=0.0003 pF

MA4P274-1225 SPICE MODEL

Pin Diode Model
NLPINM2

Is=1E-14 A
Vi=0 V
Un=900 cm2/V-sec
Wi=60 um
Rr=1.25 Ohm
Cmin=0.20 pF

C=0.27 pF

C=0.05pF

C10

C=0.0003 pF

R=Rjse Ohm

L=0.8 nH

Ordering Information

Model Number Package

MA4P274 -1225 Tube
MA4P274 -1225T Tape and Reel

R=Rjsh Ohm

C=0.05 pF

Rs=0.1 Ohm
Cjo=0.27 pF
Vj=0.7 V
M=0.5
Fc=0.5
Imax=2.5E+6 A/m
Kf=0

Ffe=1

= 150 V

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

10