M A COM MA4P274-1225T, MA4P274-1225 Datasheet
Quad PIN Diode π Attenuator
5 –3000 MHz
MA4P274-1225T
Features
n 4 PIN Diodes in SOT-25 Plastic Package
n Externally Selectable Bias and RF Match Network
n 5 – 3,000 MHz Useable Frequency Band
n + 43 dBm IP3@ 1 GHz (50 Ω)
n 1.0 dB Loss @ 1 GHz (50 Ω)
n 30 dB Attenuation @ 1 GHz (50 Ω)
Description
M/A-COM's MA4P274-1225 is a wideband, lower insertion
loss, high IP3, Quad PIN Diode π Attenuator in a low-cost,
surface mount SOT-25 package. Four PIN Diodes in one
package reduce design parasitics and improve circuit
density.
Applications
These PIN Diode Attenuators perform well where RF
Signal Amplitude Control is required in 50 Ω Handset
Circuits and 75 Ω Broadband CATV Systems. Exceptional
Insertion Loss, Attenuation Range, and IP3 at <10 mA bias
make these devices suitable for better power level control in
RF Amplifiers.
Package Outline (Topview)
3 2 1
Topview
4
5
PIN Configuration
PIN Function PIN Function
1 RF In 4 Shunt 1 Bias
2 Series
Bias
3 RF Out
5 Shunt 2 Bias
Guaranteed Electrical Specifications: @ +25 °C
Parameter Test Conditions Units Min. Typ. Max.
Ct @ 0 V 100 MHz pF 0.45 0.50
Rs @ 1 mA 100 MHz
Rs @ 10 mA 100 MHz
Vb D.C. V 125 150
Minority Carrier
Lifetime
Power
Dissipation
RF Incident
Power
( 50 % - 90 % ) Voltage
If = + 10mA, Ir = - 6mA Pulse
@ 100 kHz Sq Wave
D.C. and F = 5 – 3,000 MHz
Derate linearly to 0 mW at 125 C
Using 1,000 deg-C/W
Thermal Resistance
F = 5 – 3,000 MHz
Vshunt 1 & 2 Diode Bias = 0.75 V
Vseries Diode Bias = 0 to 20 V
Ω
Ω
nS 1000 2000
mW 100
dBm + 20
13 18
2.3 3.0
Quad PIN Diode π Attenuator
PIN 1:
RF In
Series Bias
RF Out
Functional Schematic
MA4P274-1225, V 3.00
MA4P274-1225T
PIN 3:
PIN 4 :
Shunt 1 Bias
Case Style: SOT 25
Dim Inches
Min. Max. Min. Max.
A .1103 .1181 2.80 3.10
B .1023 .1181 2.6 3.00
C 0.0355 .0512 0.9 1.30
D 0.0591 .0669 1.5 1.70
E .0374 REF.
F .0138 .0197 .35 .50
G .0031 0.0079 .08 0.2
H .0002 .0059 .05 .15
J .0138 .0216 .35 .55
Millimeters
0.95 REF.
PIN 2:
PIN 5 :
Shunt 2 Bias
Absolute Maximum Ratings1
Parameter Absolute Maximum
Operating Temperature
Storage Temperature,
No Dissipated Power
DC Voltage at Temperature
Extremes
DC Current at 25 °C
Mounting Temperature
1. Exceeding any one or combination of these limits may cause
permanent damage.
-65 °C to +125 °C
-65 °C to +150 °C
-100 V
75 mA
+235 °C for 10 seconds
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
1. Dimensions do not include mold peaks, protrusion or
gate burrs which shall not exceed 0.0098 in.
(.25) mm per side.
2. Leads Coplanarity should be 0.003 (0.08) mm Max.
2
Quad PIN Diode π Attenuator
Typical 50 Ω SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter Frequency Range Test Conditions Units Min. Typ. Max.
Insertion Loss 5 – 1,000 MHz
Insertion Loss 5 – 1,000 MHz
Return Loss 5 – 1,000 MHz
Attenuation 5 – 1,000 MHz
Input IP3 5 – 1,000 MHz
Input IP3 5 – 1,000 MHz
Input IP3 5 – 1,000 MHz
Input IP3 5 – 1,000 MHz
Settling Time 5 – 1,000 MHz Within 1 dB of Final Attenuation Value
RF C.W. Incident
Power
5 – 1,000 MHz 0 – 20 V Series Diode Bias
+ 3 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 1000 MHz, F2 = 1100 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 1000 MHz, F2 = 1100 MHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 100 MHz, F2 = 110 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 100 MHz, F2 = 110 MHz
F = 1 GHz
and 0.75 V Shunt 1 and 2 Bias
MA4P274-1225, V 3.00
dB -2.0
dB -1.0
dB -10
dB -29
dBm 43
dBm 43
dBm 43
dBm 33
uS 3
dBm + 20
MA4P274-1225T
Typical 75 Ω SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter Frequency Range Test Conditions Units Min. Typ. Max.
Insertion Loss 5 – 1,000 MHz
Insertion Loss 5 – 1,000 MHz
Attenuation 5 – 1,000 MHz
Return Loss 5 – 1,000 MHz
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
+ 2 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
+ 4.5 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
0 mA / Series Diode
and 1 V Shunt 1 and 2 Bias
+ 4.5 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
dB -1.1
F = 1 GHz
dB -0.6
F = 1 GHz
dB -27
F = 1 GHz
dB -10
F = 1 GHz
3
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