M A COM MA4EX580L-1225T Datasheet

Low Cost Silicon Double Balanced
Low Cost Silicon Double Balanced
Low Cost Silicon Double BalancedLow Cost Silicon Double Balanced HMIC
HMIC™™™™ Mixer 4.7
HMICHMIC
Mixer 4.7 ---- 6.0 GHz
Mixer 4.7 Mixer 4.7
6.0 GHz
6.0 GHz 6.0 GHz
MA4EX580L-1225
Features
7.6 dB Typical Conversion Loss
HMIC™ IC Pr ocess
Silicon Low Barrier Schottky Diode
DC – 1050 MHz IF Bandwidth
Low Cost Miniature Plastic Package
Description
M/A-COM’s MA4EX580L-1225 is a silicon monolithic 4.7 to 6.0 GHz double balanced mixer in a low cost miniature surface mount SOT-25 package. The die uses M/A-COM’s unique
silicon/glass process to achieve low loss passive
HMIC elements while retaining the advantages of low barrier silicon Schottky barrier diodes.
Applications
These mixers are well suited for high volume wireless and cellular applications where small size and repeatability are required. Typical applications include frequency conversion, modulation and demodulation in wireless receivers and
SOT-25 Outline
3 2 1
4 5
Pin Configuration
PIN Function PIN Function
1 RF 4 GND 2 GND 5 IF 3 LO
Ordering Information
Model No. Package
MA4EX580L-1225T Tape and Reel
Electrical Specifications @ +25°C=
Parameter Frequency Rage Test Conditions Units Typ. Max.
Conversion Loss 4700 MHz
4.7 - 6.0 GHz
L - R Isolation 4700 MHz
4.7 - 6.0 GHz
L - I Isolation 4700 MHz
4.7 - 6.0 GHz
R - I Isolation 4700 MHz
4.7 - 6.0 GHz
LO VSWR 4700 MHz
4.7 - 6.0 GHz
RF VSWR 4700 MHz
4.7 - 6.0 GHz
IF VSWR DC - 1050 MHz LO Drive = +5 dBm
Input IP3 4700 MHz
4.7 - 6.0 GHz
Input 1 dB Compression 4700 MHz
4.7 - 6.0 GHz
IF 1 dB Bandwidth DC - 1050 MHz LO = 4650 MHz @+5dBm MHz
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883  Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  Europe: Tel. +44 (1344) 869 595, Fax+ 44 (1 34 4) 30 0 020
=
==
LO Drive = +3+7 dBm RF = -10 dBm, IF = 60 MHz LO Drive = +5 dBm RF Level = - 10 dBm
LO Drive = +5 dBm RF Level = - 10 dBm
LO Drive = +5 dBm RF Level = - 10 dBm
LO Drive = +5 dBm RF Level = - 10 dBm
LO Drive = +5 dBm RF Level = - 10 dBm
IF Level = - 10 dBm LO Drive = +3+7 dBm
RF = -10 dBm, IF = 60 MHz LO Drive = +3+7 dBm
RF = -10 dBm, IF = 60 MHz
dB 7.6 dB 23.0
dB 22.0
dB 9.4
 
 
 
dBm 7.5
dBm +1.6
8.5
20.0
20.0
7.5
2.7
2.8
2.3
3.1
1.1
8.1
+1.5
8.0
9.5
V 3.0
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Low Cost Silicon Double Balanced H MIC™ Mixer, 4.7 - 6.0 GHz
MA4EX580L-1225
Typical Performance Curves =
Conversion Loss
-5
-5.5
-6
-6.5
-7
-7.5
-8
-8.5
RELATIVE POWER (dB)
-9
-9.5
-10 4700 4900 5100 5300 5500 5700 5900 6100 6300 6500
0
-5
-10
-15
-20
-25
RELATIVE POWER (dB)
-30
-35 4700 4800 490 0 50 00 5100 5200 5 300 5400 5500 560 0 5 700 5800 5900 600 0
Typical +3 dBm
Typical +7 dBm
FREQUENCY (MHz)
Isolations
L- I IS O L A T IO N
FREQUENCY (MHz)
=
==
R - I IS O L A T IO N
L-R ISOLATION
IP3 and 1 dB Compression
10
9 8 7 6 5
(dBm)
3
4
IP
3 2 1 0
4.70 4.80 4.90 5.00 5.10 5.20 5.30 5.40 5.50 5.60 5.70 5.80 5.90 6.00
IP
3
1 dB Com p ression
FREQUENCY (GHz)
VSWR
3.5
3
2.5
2
VSWR RATIO
1.5
1
4700 4 800 4900 5000 5100 5200 5300 5400 5500 5600 5700 5800 5900 6000
LO
RF
IF
FREQUENCY (MHz
Absolute Maximum Rating1
Parameter Maximum Ratings
Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C
Schematic
RF
PIN 1
Incident LO Power +20 dBm Incident RF Power +20 dBm Mounting Temperature +235°C for 10 seconds
1. Exceeding these limits may cause permanent damage.
Case Style
SOT-25 SOT-25
INCHES MILLIMETERS
5 X
E
TYP.
C
H
BD
G
A
J
DIM
A 0.1103 0.1181 2.8 3.10
B 0.1023 0.1181 2.6 3.00 C 0.0355 0.0512 0.9 1.30 D 0.0591 0.0669 1.5 1.7
E 0.0374 Typ.
F 0.0138 0.0197 0.35 0.5 G 0.0031 0.0079 0.08 0.20 H 0.0020 0.0059 0.05 0.15
J 0.0138 0.0216 0.35 0.55
1. Lead Coplanarity should be 0.003 (0.08) max.
IF
PIN 5
LO
PIN 3
1
MIN MAX MIN MAX
0.95 Typ.
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883  Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  Europe: Tel. +44 (1344) 869 595, Fax+ 44 (1 34 4) 30 0 020
Visit www.macom . com for ad di tional data sheets and pr o d uct i nf orm ation.
V 3.0
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