LRC MMBV409LT1, MV409 Datasheet
LESHAN RADIO COMPANY, LTD.
Silicon T uning Diode
These devices are designed forgeneral frequency control and tuning applications.
They provide solid- state reliability in replacement of mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
3
CA THODE
MAXIMUM RATINGS
Rating Symbol MBV409 MMBV409LT1 Unit
Reverse Voltage V
Forward Current I
Forward Power Dissipation
@ T
= 25°C
A
Derate above 25°C
Junction Temperature T
Storage Temperature Range T
DEVICE MARKING
MMBV409LT1 = X5, MV409 = MV409
R
F
P
D
J
stg
280
1
ANODE
20
200
2.8
+125 °C
–55 to +150 °C
20 Vdc
200 mAdc
225
1.8
mW
mW/°C
MMBV409LT1
MV409
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
= 10 µAdc)
R
Reverse Voltage Leakage Current
(V
= 15 Vdc)
R
Diode Capacitance Temperature Coefficient
(V
= 3.0 Vdc, f = 1.0 MHz)
R
Device Min Nom Max Min Min Max
MMBV409LT1, MV409 26 29 32 200 1.5 1.9
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
= 25°C unless otherwise noted)
A
V
(BR)R
TC
Ct, Diode Capacitance
V
= 3.0 Vdc, f = 1.0 MHz
R
pF
20 — — Vdc
I
R
C
— — 0.1 µAdc
— 300 — ppm/°C
Q, Figure of Merit
V
= 3.0 Vdc
R
f = 50 MHz
CR, Capacitance Ratio
C
3/C8
f = 1.0 MHz
(1)
LESHAN RADIO COMPANY, LTD.
MMBV409LT1 MV409
TYPICAL CHARACTERISTICS
40
32
f = 1.0MHz
24
16
8
, DIODE CAPACIT ANCE (pF)
T
C
0
1 2 3 10 20 30 100
T
A
= 25°C
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
100
60
20
10
6.0
2.0
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
, REVERSE CURRENT ( nA )
R
0.002
I
0.001
–60 –40 –20 0 +20 +40 +60 +80 +100 +120 +140
V R= 15Vdc
T A , AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
1000
V
=3Vdc
R
T
= 25°C
A
100
Q , FIGURE OF MERIT
10
10 100 1000
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
1.04
V R= 3.0Vdc
1.03
f
= 1.0MHz
1.02
1.01
1.00
0.99
0.98
0.97
, DIODE CAPACITANCE (NORMALIZED)
T
0.96
C
–75 –50 –25 0 +25 +50 +75 +100 +125
T A , AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
MMBV409–2/2
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