LRC MUN5335DW1T1, MUN5311DW1T1, MUN5312DW1T1, MUN5313DW1T1, MUN5314DW1T1 Datasheet
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LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor T ransistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BR T devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RA TINGS (T A = 25°C unless otherwise noted, common for Q 1
and Q 2 , – minus sign for Q 1 (PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
CBO
CEO
C
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation P
D
T A = 25°C
Derate above 25°C
Thermal Resistance – R
θJA
Junction-to-Ambient 490 (Note 2.)
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
P
D
T A = 25°C
Derate above 25°C
Thermal Resistance –
R
θJA
Junction-to-Ambient
Thermal Resistance –
R
θJL
Junction-to-Lead
Junction and Storage
T J , T
stg
Temperature
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
50 Vdc
50 Vdc
100 mAdc
187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.)
mW/°C
2.0 (Note 2.)
670 (Note 1.) °C/W
250 (Note 1.)
mW
385 (Note 2.)
2.0 (Note 1.)
mW/°C
3.0 (Note 2.)
493 (Note 1.)
°C/W
325 (Note 2.)
188 (Note 1.)
°C/W
208 (Note 2.)
–55 to +150 °C
MUN5311DW1T1
Series
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
Q
6
2
R
1
5
R
2
R
1
2
4
1
R
2
Q
1
3
MARKING DIAGRAM
6
45
XX
132
xx = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
MUN5311dw–1/13
LESHAN RADIO COMPANY, LTD.
MUN5311DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R 1(K) R 2(K) Shipping
MUN5311DW1T1 SOT–363 11 10 10 3000/Tape & Reel
MUN5312DW1T1 SOT–363 12 22 22 3000/Tape & Reel
MUN5313DW1T1 SOT–363 13 47 47 3000/Tape & Reel
MUN5314DW1T1 SOT–363 14 10 47 3000/Tape & Reel
MUN5315DW1T1 (Note 3.) SOT–363 15 10 3000/Tape & Reel
MUN5316DW1T1 (Note 3.) SOT–363 16 4.7 3000/Tape & Reel
MUN5330DW1T1 (Note 3.) SOT–363 30 1.0 1.0 3000/Tape & Reel
MUN5331DW1T1 (Note 3.) SOT–363 31 2.2 2.2 3000/Tape & Reel
MUN5332DW1T1 (Note 3.) SOT–363 32 4.7 4.7 3000/Tape & Reel
MUN5333DW1T1 (Note 3.) SOT–363 33 4.7 47 3000/Tape & Reel
MUN5334DW1T1 (Note 3.) SOT–363 34 22 47 3000/Tape & Reel
MUN5335DW1T1 (Note 3.) SOT–363 35 2.2 47 3000/Tape & Reel
8 8
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current MUN5311DW1T1
(V
= 6.0 V, I C = 0) MUN5312DW1T1
EB
Collector-Base Breakdown Voltage (I C =10 µA, I E = 0)
Collector-Emitter Breakdown Voltage(Note 4.)(IC =2.0 mA,I B=0)
= 50 V, I E = 0) I
CB
= 50 V, I B = 0) I
CE
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
I
V
V
CBO
CEO
EBO
(BR)CBO
(BR)CEO
– – 100 nAdc
– – 500 nAdc
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
–
0.2
–
0.1
–
0.2
–
0.9
–
1.9
–
4.3
–
2.3
–
1.5
–
0.18
–
0.13
–
0.2
50 – – Vdc
50 – – Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
mAdc
MUN5311dw–2/13
LESHAN RADIO COMPANY, LTD.
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
(Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 5.)
DC Current Gain MUN5311DW1T1
(V
= 10 V, I C = 5.0 mA) MUN5312DW1T1
CE
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Collector-Emitter Saturation Voltage
(I C = 10 mA, I B = 0.3 mA)
(I C = 10 mA, I B = 5 mA) MUN5330DW1T1/MUN5331DW1T1
(I C = 10 mA, I B = 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
h
V
FE
CE(sat)
35
60
80
80
160
160
3.0
8.0
15
80
80
80
– – 0.25 Vdc
60
100
140
140
350
350
5.0
15
30
200
150
140
–
–
–
–
–
–
–
–
–
–
–
–
Output Voltage (on)
(V CC= 5.0V, VB = 2.5V,R L= 1.0 kΩ) MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
(V CC=5.0V,VB=3.5 V, RL=1.0kΩ) MUN5313DW1T1
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
MUN5311dw–3/13
LESHAN RADIO COMPANY, LTD.
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
(Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 5.)
Output Voltage (off)
(V
=5.0V, VB=0.5V, RL=1.0kΩ)
CC
(VCC=5.0V, VB=0.050V, RL=1.0kΩ) MUN5330DW1T1
(VCC=5.0V, VB=0.25V, RL=1.0kΩ) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
Input Resistor MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Resistor Ratio
MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
300
V
OH
R
1
R 1 / R
4.9 – – Vdc
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
2
0.8
0.17
–
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
0.21
–
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
0.25
–
1.2
0.185
0.56
0.056
kΩ
250
200
150
100
, POWER DISSIPATION (mW)
50
D
P
0
–50 0 50 100 150
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
MUN5311dw–4/13
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