LRC MUN5233DW1T1, MUN5212DW1T1, MUN5213DW1T1, MUN5214DW1T1, MUN5215DW1T1 Datasheet

LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MAXIMUM RA TINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

Rating Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

CBO

CEO

C

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated) Symbol Max Unit

Total Device Dissipation P

D

T A = 25°C

Derate above 25°C

Thermal Resistance – R

θJA

Junction-to-Ambient 490 (Note 2.)

Characteristic

(Both Junctions Heated) Symbol Max Unit

Total Device Dissipation

P

D

T A = 25°C
Derate above 25°C

Thermal Resistance –

R

θJA

Junction-to-Ambient
Thermal Resistance –

R

θJL

Junction-to-Lead

Junction and Storage

T J , T

stg

Temperature

1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad

50 Vdc
50 Vdc

100 mAdc

187 (Note 1.) mW

256 (Note 2.)

1.5 (Note 1.)

mW/°C

2.0 (Note 2.)

670 (Note 1.) °C/W

250 (Note 1.)

mW

385 (Note 2.)

2.0 (Note 1.)

mW/°C

3.0 (Note 2.)

493 (Note 1.)

°C/W

325 (Note 2.)

188 (Note 1.)

°C/W

208 (Note 2.)

–55 to +150 °C

MUN5211DW1T1

Series

6

5

4

1

2

3

SOT-363

CASE 419B STYLE1

Q

6

2

R

1

5

R

2

R

1

2

4

1

R

2

Q

1

3

MARKING DIAGRAM

6

45

7X

132

7X = Device Marking

= (See Page 2)

DEVICE MARKING

INFORMATION

See specific marking information in
the device marking table on page 2 of
this data sheet.

MUN5211dw–1/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

DEVICE MARKING AND RESISTOR VALUES

Device Package Marking R 1(K) R 2(K) Shipping

MUN5211DW1T1 SOT–363 7A 10 10 3000/Tape & Reel
MUN5212DW1T1 SOT–363 7B 22 22 3000/Tape & Reel
MUN5213DW1T1 SOT–363 7C 47 47 3000/Tape & Reel
MUN5214DW1T1 SOT–363 7D 10 47 3000/Tape & Reel
MUN5215DW1T1 (Note 3.) SOT–363 7E 10 3000/Tape & Reel
MUN5216DW1T1 (Note 3.) SOT–363 7F 4.7 3000/Tape & Reel
MUN5230DW1T1 (Note 3.) SOT–363 7G 1.0 1.0 3000/Tape & Reel
MUN5231DW1T1 (Note 3.) SOT–363 7H 2.2 2.2 3000/Tape & Reel
MUN5232DW1T1 (Note 3.) SOT–363 7J 4.7 4.7 3000/Tape & Reel
MUN5233DW1T1 (Note 3.) SOT–363 7K 4.7 47 3000/Tape & Reel
MUN5234DW1T1 (Note 3.) SOT–363 7L 22 47 3000/Tape & Reel
MUN5235DW1T1 (Note 3.) SOT–363 7M 2.2 47 3000/Tape & Reel
MUN5236DW1T1 (Note 3.) SOT–363 7N 100 100 3000/Tape & Reel
MUN5237DW1T1 (Note 3.) SOT–363 7P 47 22 3000/Tape & Reel

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current MUN5211DW1T1
(V

= 6.0 V, I C = 0) MUN5212DW1T1

EB

= 50 V, I E = 0) I

CB

= 50 V, I B = 0) I

CE

CBO

CEO

I

EBO

MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1

Collector-Base Breakdown Voltage (I C = 10 µA, I E = 0)
Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0)

V
V

(BR)CBO

(BR)CEO

3. New resistor combinations. Updated curves to follow in subsequent data sheets.

4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

8 8

– – 100 nAdc
– – 500 nAdc

–

–
–
–
–
–
–
–
–
–
–
–
–
–
–

0.5

–

0.2

–

0.1

–

0.2

–

0.9

–

1.9

–

4.3

–

2.3

–

1.5

–

0.18

–

0.13

–

0.2

–

0.05

–

0.13
50 – – Vdc
50 – – Vdc

mAdc

MUN5211dw–2/8

LESHAN RADIO COMPANY, LTD.

MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(Note 5.)

DC Current Gain MUN5211DW1T1
(V

= 10 V, I C = 5.0 mA) MUN5212DW1T1

CE

MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5235DW1T1
MUN5235DW1T1

h

FE

35
60
80
80
160
160

3.0

8.0
15
80
80
80
80
80

60
100
140
140
350
350

5.0
15
30
200
150
140
150
140

–
–
–
–
–
–
–
–
–
–
–
–
–
–

Collector-Emitter Saturation Voltage

(IC= 10mA,IB= 0.3 mA)
(I C= 10mA, I B= 5mA) MUN5230DW1T1/MUN5231DW1T1
(I C= 10mA, IB= 1mA) MUN5215DW1T1/MUN5216DW1T1

MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
Output Voltage (on)
(V

= 5.0 V, V B = 2.5 V, R L = 1.0 kΩ)

CC

MUN5211DW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1

(V

= 5.0 V, V B = 3.5 V, R L = 1.0 kΩ)

CC

(V

= 5.0 V, V B = 5.5 V, R L = 1.0 kΩ)

CC

(V

= 5.0 V, V B = 4.0 V, R L = 1.0 kΩ)

CC

Output Voltage (off)
(V

= 5.0 V, V B = 0.05 V, R L = 1.0 kΩ)

CC

(V

= 5.0 V, V B = 0.25 V, R L = 1.0 kΩ)

CC

(V

CC

= 5.0 V, V B = 0.5 V, R L = 1.0 kΩ)

MUN5213DW1T1
MUN5236DW1T1
MUN5237DW1T1

MUN5230DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1

V

CE(sat)

V

V

– – 0.25 Vdc

OL

OH

–
–
–
–
–
–
–
–
–
–
–
–
–
–

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

–

0.2

4.9 – – Vdc

Vdc

5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

MUN5211dw–3/8