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Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
LESHAN RADIO COMPANY, LTD.
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RA TINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
CBO
CEO
C
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation P
D
T A = 25°C
Derate above 25°C
Thermal Resistance – R
θ JA
Junction-to-Ambient 490 (Note 2.)
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
P
D
T A = 25°C
Derate above 25°C
Thermal Resistance –
R
θ JA
Junction-to-Ambient
Thermal Resistance –
R
θ JL
Junction-to-Lead
Junction and Storage
T J , T
stg
Temperature
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
–50 Vdc
–50 Vdc
–100 mAdc
187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.)
mW/°C
2.0 (Note 2.)
670 (Note 1.) °C/W
250 (Note 1.)
mW
385 (Note 2.)
2.0 (Note 1.)
mW/°C
3.0 (Note 2.)
493 (Note 1.)
°C/W
325 (Note 2.)
188 (Note 1.)
°C/W
208 (Note 2.)
–55 to +150 °C
MUN5111DW1T1
Series
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
Q
6
2
R
1
5
R
2
R
1
2
4
1
R
2
Q
1
3
MARKING DIAGRAM
6
4 5
XX
13 2
xx = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
MUN5111dw–1/11
LESHAN RADIO COMPANY, LTD.
MUN5111DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R 1(K) R 2(K) Shipping
MUN5111DW1T1 SOT–363 0A 10 10 3000/Tape & Reel
MUN5112DW1T1 SOT–363 0B 22 22 3000/Tape & Reel
MUN5113DW1T1 SOT–363 0C 47 47 3000/Tape & Reel
MUN5114DW1T1 SOT–363 0D 10 47 3000/Tape & Reel
MUN5115DW1T1 (Note 3.) SOT–363 0E 10 – 3000/Tape & Reel
MUN5116DW1T1 (Note 3.) SOT–363 0F 4.7 – 3000/Tape & Reel
MUN5130DW1T1 (Note 3.) SOT–363 0G 1.0 1.0 3000/Tape & Reel
MUN5131DW1T1 (Note 3.) SOT–363 0H 2.2 2.2 3000/Tape & Reel
MUN5132DW1T1 (Note 3.) SOT–363 0J 4.7 4.7 3000/Tape & Reel
MUN5133DW1T1 (Note 3.) SOT–363 0K 4.7 47 3000/Tape & Reel
MUN5134DW1T1 (Note 3.) SOT–363 0L 22 47 3000/Tape & Reel
MUN5135DW1T1 (Note 3.) SOT–363 0M 2.2 47 3000/Tape & Reel
MUN5136DW1T1 (Note 3.) SOT–363 0N 100 100 3000/Tape & Reel
MUN5137DW1T1 (Note 3.) SOT–363 0P 47 22 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current MUN5111DW1T1
(V
= –6.0 V, I C = 0) MUN5112DW1T1
EB
Collector-Base Breakdown Voltage (I C = –10 µ A, I E = 0)
Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0)
ON CHARACTERISTICS (Note 4.)
Collector-Emitter Saturation Voltage (I
= –10mA, I B= –5mA) MUN5130DW1T1/MUN5131DW1T1
(I
C
(I
= –10mA, IB= –1mA) MUN5115DW1T1/MUN5116DW1T1
C
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%
= –50 V, I E = 0) I
CB
= –50 V, I B = 0) I
CE
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
= –10mA,IE= –0.3 mA) V
C
I
V
V
CBO
CEO
EBO
(BR)CBO
(BR)CEO
CE(sat)
– – –100 nAdc
– – –500 nAdc
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.5
–
–0.2
–
–0.1
–
–0.2
–
–0.9
–
–1.9
–
–4.3
–
–2.3
–
–1.5
–
–0.18
–
–0.13
–
–0.2
–
–0.05
–
–0.13
mAdc
–50 – – Vdc
–50 – – Vdc
– – –0.25 Vdc
MUN5111dw–2/11
LESHAN RADIO COMPANY, LTD.
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 5.)
DC Current Gain MUN5111DW1T1
(V
= –10 V, I C = –5.0 mA) MUN5112DW1T1
CE
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5135DW1T1
MUN5135DW1T1
Output Voltage (on)
(V
= –5.0 V, V B = –2.5 V, R L = 1.0 kΩ)
CC
MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
(V
= –5.0 V, V B = –3.5 V, R L = 1.0 kΩ)
CC
(V
= –5.0 V, V B = –5.5 V, R L = 1.0 kΩ)
CC
(V
= –5.0 V, V B = –4.0 V, R L = 1.0 kΩ)
CC
Output Voltage (off)
(V
= –5.0 V, V B = –0.05 V, R L = 1.0 kΩ)
CC
(V
= –5.0 V, V B = –0.25 V, R L = 1.0 kΩ)
CC
(V
= –5.0 V, V B = –0.5 V, R L = 1.0 kΩ)
CC
MUN5113DW1T1
MUN5136DW1T1
MUN5137DW1T1
MUN5130DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
h
V
V
FE
OL
OH
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
–
–
–
–
–
–
–
–
–
–
–
–
–
–
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–4.9 – – Vdc
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Vdc
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
MUN5111dw–3/11
LESHAN RADIO COMPANY, LTD.
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 5.)
Input Resistor MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/
MUN5113DW1T1/MUN5136DW1T1
MUN5114DW1T1
MUN5115DW1T1/MUN5116DW1T1
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5137DW1T1
R
1
R 1 /R
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
2
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
kΩ
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
300
250
200
150
100
, POWER DISSIPATION (mW)
50
D
P
0
–50 0 50 100 150
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
MUN5111dw–4/11