LRC MUN2111RT1, MUN2112RT1, MUN2113RT1, MUN2115RT1, MUN2116RT1 Datasheet
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LESHAN RADIO COMPANY, LTD.
Bias Resistor T ransistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
PIN3
PIN2
base
(Input)
R1
R2
Collector
(Output)
PIN2
Emitter
(Ground)
MUN2111RT1
MUN21 12RT1
MUN21 13RT1
MUN21 14RT1
MUN21 15RT1
MUN21 16RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
2
1
CASE 318–03 , STYLE 1
( SC – 59 )
MAXIMUM RA TINGS (T
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
Total Power Dissipation @ T A = 25°C
Derate above 25°C 1.6 mW/°C
= 25°C unless otherwise noted)
A
(1)
P
CBO
CEO
C
50 Vdc
50 Vdc
100 mAdc
D
200 mW
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) R
Operating and Storage Temperature Range T J , T
Maximum Temperature for Soldering Purposes
Time in Solder Bath 10 Sec
θ JA
stg
T
L
625 °C/W
–65 to +150 °C
260 °C
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K ) R2 (K)
MUN21 11RT1 6A 10 10
MUN2112R T1 6B 22 22
MUN2113R T1 6C 47 47
MUN2114R T1 6D 10 47
MUN21 15RT1
MUN21 16RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134R T1
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
(2)
(2)
(2)
(2)
(2)
(2)
(2)
6E 10
6F 4.7
6G 1.0 1.0
6H 2.2 2.2
6J 4.7 4.7
6K 4.7 47
6L 22 47
8
8
P1–1/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0) I
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter-Base Cutoff Current MUN2111RT1 I
CBO
CEO
EBO
(VEB = 6.0 V, IC = 0) MUN2112RT1 - - 0.2
MUN2113R T1 - - 0.1
MUN2114R T1 - - 0.2
MUN2115R T1 - - 0.9
MUN2116R T1 - - 1.9
MUN2130RT1 - - 4.3
MUN2131RT1 - - 2.3
MUN2132RT1 - - 1.5
MUN2133RT1 - - 0.18
MUN2134RT1 - - 0.13
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V
(3)
(3)
(IC=2.0mA, IB=0) V
Collector-Emitter Breakdown Voltage
ON CHARACTERISTICS
DC Current Gain MUN2111RT1 h
(BR)CBO
(BR)CEO
FE
(VCE = 10 V, IC = 5.0 mA) MUN2112R T1 60 100 -
MUN2113R T1 80 140 MUN2114R T1 80 140 MUN2115R T1 160 250 MUN2116R T1 160 250 MUN2130RT1 3.0 5.0 MUN2131RT1 8.0 15 MUN2132RT1 15 27 MUN2133RT1 80 140 MUN2134RT1 80 130 -
Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA) V
CE(sat)
(IC = 10 mA, IB = 0.3 mA) MUN2111RT1 MUN2112RT1
MUN21 13RT1 MUN21 14RT1 MUN21 15RT1 MUN2130RT1
(IC = 10 mA, IB = 5.0 mA) MUN2131RT1 - - 0.25
(IC = 10 mA, IB = 1.0 mA) MUN2116RT1 MUN2132RT1
MUN2134RT1
Output Voltage (on) V
OL
(VCC=5.0V,VB=2.5V, RL=1.0kΩ) MUN211 1RT1
MUN2112RT1 MUN21 14R T1 MUN2115R T1 MUN21 16RT1 - - 0.2
MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1
MUN2134RT1
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ) MUN2113RT1 - - 0.2
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
- - 10 0 nAdc
- - 500 nAdc
- - 0.5 mAdc
50 - - Vdc
50 - - Vdc
35 60 -
- - 0.25
- - 0.25
Vdc
Vdc
P1–2/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Output Voltage (off) (VCC= 5.0V, VB = 0.5 V, RL = 1.0kΩ)VOH 4.9 — — Vdc
(VCC= 5.0V, VB = 0.050 V, RL =1.0kΩ) MUN2130RT1
(VCC= 5.0V, VB = 0.25 V, RL =1.0kΩ) MUN2115R T1
Input Resistor MUN2111RT1 R
Resistor Ratio
MUN2111RT1 MUN2112RT1 MUN2113RT1
MUN2114RT1
MUN2115RT1 MUN2116RT1
MUN2130RT1 MUN2131RT1 MUN2132RT1
MUN2133RT1
MUN2134RT1
= 25°C unless otherwise noted) (Continued)
A
MUN2116R T1
MUN2131RT1
MUN2132RT1
1
MUN2112R T1 15.4 22 28.6
MUN2113R T1 32.9 47 61.1
MUN2114R T1 7.0 10 13
MUN2115R T1 7.0 10 13
MUN2116R T1 3.3 4.7 6.1
MUN2130RT1 0.7 1.0 1.3
MUN2131RT1 1.5 2.2 2.9
MUN2132RT1 3.3 4.7 6.1
MUN2133RT1 3.3 4.7 6.1
MUN2134RT1 15.4 22 28.6
R 1 /R
7.0 10 13 kΩ
0.8 1.0 1.2
2
0.17 0.21 0.25
———
0.8 1.0 1.2
0.055 0.1 0.185
0.38 0.47 0.56
P1–3/7
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