LRC MMBV809LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Silicon T uning Diode
This device is designed for 900 MHz frequency control
and tuning applications. It provides solid–state reliability in
replacement of mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
• Available in 8 mm Tape and Reel
1
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Device Dissipation
Derate above 25°C 1.8 mW/°C
Junction Temperature T
Storage Temperature Range T
(1)
@T A = 25°C P
R
F
D
J
stg
–55 to +125 °C
3
(
CATHODE
20 Vdc
20 mAdc
225 mW
+125 °C
MMBV809LT1
4.5-6.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic-All Types Symbol Min Max Unit
Reverse Breakdown Voltage
(IR=10µAdc)
Reverse Voltage Leakage Current
(VR=15Vdc)
C
Diode Capacitance
T
=2.0Vdc,f=1.0MHz
V
R
pF
V
(BR)R
I
R
20 — Vdc
— 50 nAdc
Q,Figure of Merit
V
=3.0Vdc
R
f=500MHz
C
,Capacitance Ratio
R
C
2/C8
f=1.0MHz(2)
Device Type Min Typ Max Typ Min Max
MMBV809LT1
1. FR-5 Board 1.0 x 0.75 x 0.62 in.
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 vdc
4.5 5.3 6.1 75 1.8 2.6
MMBV809LT1–1/2
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMBV809LT1
10
9
8
7
6
5
4
3
, DIODE CAPACITANCE (pF)
T
C
2
1
0
1000
800
600
, SERIES RESISTANCE (MHz)
S
R
400
0
1000
100
Q, FIGURE OF MERIT
10
11015
4
V
, REVERSE VOLTAGE (VOLTS)
R
823 50.5
0.1
Figure 1. Diode Capacitance
1.04
VR = 3.0 Vdc
f = 1.0 MHz
0.2 0.6 1.0
0.4 0.8 1.2
f, FREQUENCY (GHz)
1.03
1.02
1.01
1.00
0.99
0.98
, DIODE CAPACITANCE (NORMALIZED)
0.97
T
C
0.96
VR = 3.0 Vdc
f = 1.0 MHz
-75
-50 0 +50 +100
VR = 3 Vdc
T
= 25°C
A
1.0 10
f, FREQUENCY (GHz)
Figure 2. Figure of Merit
-25 +25 +75 +125
T
, AMBIENT TEMPERATURE (°C)
A
Figure 3. Series Resistance
Figure 4. Diode Capacitance
MMBV809LT1–2/2
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