LRC MMBV609LT1 Datasheet
Silicon T uning Diode
LESHAN RADIO COMPANY, LTD.
This device is designed for FM tuning, general frequency control and
tuning, or any top–of–the–line application requiring back–to–back diode
configuration for minimum signal distortion and detuning. This device is
supplied in the SOT–23 plastic package for high volume, pick and place
assembly requirements.
• High Figure of Merit — Q = 450 (Typ) @ V R = 3.0 Vdc, f = 50 MHz
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching
• Hyper Abrupt Junction Process Provides High Tuning Ratio
3
1
2
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Device Dissipation @T A = 25°C P
R
F
D
Derate above 25°C 1.8 mW/°C
Junction Temperature T
Storage Temperature Range T
J
stg
20 Vdc
100 mAdc
225 mW
+125 °C
–55 to +150 °C
MMBV609LT1
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
DEVICE MARKING
MMBV609LT1=5L
ELECTRICAL CHARACTERISTICS(T A=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR=10µAdc)
Reverse Voltage Leakage Current
(VR=15Vdc)
Diode Capacitance
(VR=3.0 Vdc,f=1.0MHz)
Capacitance Ratio C3/C8
(f=1.0MHz)
Figure of Merit
(VR=3.0 Vdc, f=50MHz)
V
(BR)R
I
R
C
T
C
R
20 — — Vdc
— — 10 nAdc
26 — 32 pF
1.8 — 2.4 —
Q 250 450 — —
MMBV609LT1–1/2
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMBV609LT1
50
40
30
20
10
, DIODE CAPACIT ANCE (pF)
T
C
0
123 5 7 10203050
f = 1.0MHz
T
= 25°C
A
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1.04
V R= 3.0Vdc
1.03
1.02
1.01
1.00
0.99
0.98
0.97
, DIODE CAPACIT ANCE ( NORMALIZED )
T
C
0.96
= 1.0MHz
f
–75 –50 –25 0 +25 +50 +75 +100 +125
1000
=3Vdc
V
R
T
= 25°C
A
100
Q , FIGURE OF MERIT
10
10 100 1000
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
T A , AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
MMBV609LT1–2/2
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