LRC MMBV432LT1 Datasheet
Silicon T uning Diode
LESHAN RADIO COMPANY, LTD.
This device is designed for FM tuning, general frequency control and
tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied
in the SOT–23 plastic package for high volume, pick and place assembly
requirements.
• High Figure of Merit— Q = 150 (Typ) @ V R = 2.0 Vdc, f = 100 MHz
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching – Guaranteed ± 1.0% (Max)
Over Specified Tuning Range
1
2
3
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Device Dissipation @T A = 25°C P
R
F
D
Derate above 25°C 1.8 mW/°C
Junction Temperature T
Storage Temperature Range T
J
stg
14 Vdc
200 mAdc
225 mW
+125 °C
–55 to +125 °C
MMBV432LT1
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
DEVICE MARKING
MMBV432LT1=M4B
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR=10µAdc)
Reverse Voltage Leakage Current
(VR=9.0Vdc)
Diode Capacitance
(VR=2.0 Vdc,f=1.0MHz)
Capacitance Ratio C2/C8
(f=1.0MHz)
Figure of Merit
(VR=2.0 Vdc, f=100MHz)
V
(BR)R
I
R
C
T
C
R
14 — — Vdc
— — 100 nAdc
43 — 48.1 pF
1.5 — 2.0 —
Q 100 150 — —
MMBV432–1/2
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMBV432LT1
100
70
50
30
f = 1.0MHz
= 25°C
20
, DIODE CAPACIT ANCE (pF)
T
C
10
1235710
T
A
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
2000
1000
500
200
100
50
V R=2.0Vdc
= 25°C
T
A
Q , FIGURE OF MERIT
20
10 20 30 50 70 10 200 300
f , FREQUENCY ( MHz )
Figure 3. Figure of Merit versus Frequency
550
450
350
250
= 100MHz
f
150
Q , FIGURE OF MERIT
50
0246810
T
A
= 25°C
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit versus Voltage
1.06
1.04
V R= 2.0Vdc
1.02
1.00
0.98
, DIODE CAPACITANCE (NORMALIZED)
T
C
0.96
–75 –50 –25 0 +25 +50 +75 +100 +125
V R= 4.0Vdc
f
= 1.0MHz
T J , JUNCTION TEMPERATURE (°C)
Figure 4. Diode Capacitance versus Temperature
10
TA = 125°C
5
2
1
0.5
0.2
0.1
0.05
, REVERSE CURRENT( nA)
R
0.02
I
0.01
= 75°C
T
A
= 25°C
T
A
02468101214
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Reverse Current versus Reverse Voltage
MMBV432–2/2
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