LRC MMBV3700LT1 Datasheet
Silicon Pin Diode
LESHAN RADIO COMPANY, LTD.
These devices are designed primarily for VHF band switching appli-
MMBV3700LT1
cations but are also suitable for use in general–purpose switching
circuits. They are supplied in a cost–effective plastic package for
economical, high–volume consumer and industrial requirements. They
are also available in surface mount.
• Long Reverse Recovery Time
SWITCHING DIODE
t rr = 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
• Low Series Resistance @ 100 MHz —
R S = 0.7 Ohms (Typ) @ I F = 10 mAdc
• Reverse Breakdown Voltage = 200 V (Min)
3
CATHODE
1
ANODE
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol MV21XX MMBV21XXLT1 Unit
Reverse Voltage V
Device Dissipation @T A = 25°C P
R
D
200 Vdc
280 200 mW
Derate ab ove 25°C 2.8 2.0 mW/°C
Junction Temperature T
Storage Temperature Range T
J
stg
+150 °C
–55 to +150 °C
DEVICE MARKING
MMBV3700LT1=4R
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR=10µAdc)
Diode Capacitance
(VR=20 Vdc,f=1.0MHz)
Series Resistance(figure5)
(IF=10mAdc)
Reverse Leakage Current
(VR=150Vdc)
Reverse Recovery Time
(IF=IR=10mAdc)
V
(BR)R
C
T
R
S
I
R
t
rr
200 — — V dc
— — 1.0 pF
— 0.7 1.0 Ω
— — 0.1 µAdc
— 300 — ns
SILICON PIN
3
1
2
CASE 318–08, STYLE8
SOT– 23 (TO–236AB)
I9–1/2
LESHAN RADIO COMPANY, LTD.
MMBV3700LT1 MPN3700
TYPICAL CHARACTERISTICS
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
, SERIES RESISTANCE ( OHMS)
S
R
0
0 2.0 4.0 6.0 8.0 10 12 14 16
TA = 25°C
I F , FORWARD CURRENT ( mA )
Figure 1. Series Resistance
10
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
, DIODE CAPACITANDE ( pF )
T
0.1
C
0 - 10 - 20 - 30 - 40 - 50
T
A
= 25°C
V R , FORWARD VOLT AGE ( VOLTS )
Figure 3. Diode Capacitance
800
700
600
500
400
300
200
100
, FORWARD CURRENT ( mA )
F
I
0
0.7 0.8 0.9 1.0
TA = 25°C
V F , FORWARD VOLTAGE ( VOLTS )
Figure 2. Forward Voltage
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
, REVERSE CURRENT ( µA )
R
I
0.004
0.001
- 60 - 20 0 +20 +60 +100 +140
V R= 25Vdc
T A , AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
I9–2/2
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