LRC MMBV3401LT1 Datasheet
Silicon Pin Diode
LESHAN RADIO COMPANY, LTD.
This device is designd primarily for VHF band switching applications
but is also suitable for use in general-purpose switching circuits.Supplied
in a surface Mount package.
• Rugged Pin Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance—0.7pF Typ at VR=20Vdc
• Very Low Series Resistance at 100MHz—0.34Ohms(Typ)@IF=10mAdc
3
CATHODE
1
ANODE
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward power Dissipation @T A = 25°C P
Derate above 25°C 2.0 mW/°C
Junction Temperature T
Storage Temperature Range T
R
D
J
stg
20 Vdc
200 mW
+125 °C
–55 to +150 °C
DEVICE MARKING
MMBV3401LT1=4D
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR=10µAdc)
Diode Capacitance
(VR=20 Vdc)
Series Resistance(figure5)
(IF=10mAdc,f=100MHz)
Reverse Voltage Leakage Current
(VR=15Vdc)
V
(BR)R
C
T
R
S
I
R
35 — — Vdc
— — 1.0 pF
— — 0.7 Ω
— — 0.1 µAdc
MMBV3401LT1
SILICON PIN
SWITCHING DIODE
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MMBV3401LT1–1/2
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMBV3401LT1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
, SERIES RESISTANCE ( OHMS)
S
R
0
0 2.0 4.0 6.0 8.0 1 0 12 14 16
TA = 25°C
I F , FORWARD CURRENT ( mA )
Figure 1. Series Resistance
20
10
7.0
5.0
2.0
1.0
0.7
0.5
, DIODE CAPACITANDE ( pF )
T
0.2
C
+3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 -21 -24 -17
T
A
= 25°C
V R , FORWARD VOLTAGE ( VOLTS )
Figure 3. Diode Capacitance
50
40
30
TA = 25°C
20
10
, FORWARD CURRENT ( mA )
F
I
0
0.5 0.6 0.7 0.8 0.9 1.0
V F , FORWARD VOLTAGE ( VOLTS )
Figure 2. Forward Voltage
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
, REVERSE CURRENT ( µA )
R
I
0.004
0.001
- 60 - 20 0 +20 +60 +100 +140
V R= 25Vdc
T A , AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
MMBV3401LT1–2/2
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