LRC MMBV3102LT1 Datasheet

Silicon T uning Diode

LESHAN RADIO COMPANY, LTD.

This device is designed in the Surface Mount package for
general frequency controland tuning applications. It provides
solid–state reliability in replacement of mechanical tuning
methods.

• High Q with Guaranteed Minimum Values at VHF Frequencies

• Controlled and Uniform Tuning Ratio

3
CA THODE

1
ANODE

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage V
Forward Current I
Device Dissipation @T A = 25°C P
Derate above 25°C 1.8 mW/°C
Junction Temperature T
Storage Temperature Range T

R

F

D

J

stg

30 Vdc
200 mAdc
225 mW

+125 °C

–55 to +150 °C

MMBV3102LT1

22 pF(Nominal) 30Volts

VOLTAGE VARIABLE

CAPACITANCE DIODES

3

1

2

CASE 318–08, STYLE 8

SOT– 23 (TO–236AB)

DEVICE MARKING

MMBV3102LT1= M4C

ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage
(IR=10µAdc)
Reverse Voltage Leakage Current I
(VR=15Vdc)
Diode Capacitance Temperature Coefficient
(VR=4.0Vdc,f=1.0MHz)

Diode Capacitance

C

T

V

=3.0Vdc,f=1.0MHz

R

pF

V

(BR)R

R

T

CC

30 — — Vdc

— — 0.1 µAdc

— 300 — ppm/°C

Q,Figure of Merit

VR=3.0Vdc

f=50MHz

,Capacitance Ratio

C

R

C

3/C25

f=1.0MHz

Device Type Min Nom Max Min Min Typ

MMBV3102LT1

20 22 25 200 4.5 4.8

MMBV3102LT1–1/2

LESHAN RADIO COMPANY, LTD.

TYPICAL CHARACTERISTICS

MMBV3102LT1

40
36
32
28
24
20
16
12

8.0

, DIODE CAPACIT ANCE (pF)

T

4.0

C

0

f = 1.0MHz

= 25°C

T

A

0.3 0.5 1.0 2.0 3.0 5.0 10 20 3 0

V R , REVERSE VOLTAGE (VOLTS)

Figure 1. Diode Capacitance

100

10

V R= 20Vdc

1.0

0.1

0.01

, REVERSE CURRENT ( nA)

R

I

0.001

-60 -20 0 +20 +60 +100 +140

T A , AMBIENT TEMPERA TURE (°C)

Figure 3. Leakage Current

20

TA = 25°C

10

= 50MHz

f

5.0

3.0

2.0

1.0

0.5

Q , FIGURE OF MERIT

0.3

0.2
0 3.0 6.0 9.0 12 15 18 21 24 27 30

f , FREQUENCY ( GHz )

Figure 2. Figure of Merit

1.04

V R= 3.0Vdc

1.03

1.02

1.01

1.00

0.99

0.98

0.97

, DIODE CAPACIT ANCE ( NORMALIZED )

T

0.96

C

= 1.0MHz

f

–75 –50 –25 0 +25 +50 +75 +100 +125

T A , AMBIENT TEMPERATURE (°C)

Figure 4. Diode Capacitance

NOTES ON TESTING ANG SPECIFICATIONS

1. C R is the ratio of C T measured at 3.0 Vdc divided by C T measured at 25 Vdc.

MMBV3102LT1–2/2