LRC MMBV2103LT1, MMBV2105LT1, MMBV2107LT1, MMBV2108LT1, MMBV2109LT1 Datasheet
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Silicon T uning Diode
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1
MMBV2103LT1
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance —10%
• Complete Typical Design Curves
3
CA THODE
1
ANODE
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV21 11
MV21 1 5
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol MV21XX MMBV21XXLT1 Unit
Reverse Voltage V
Forward Current I
Forward power Dissipation @T A
Derate above 25°C 2.8 1.8 mW/°C
Junction Temperature T
Storage Temperature Range T
DEVICE MARKING
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H MMBV2108LT1=4X
MMBV2105L T1=4U MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR=1.0µAdc)
Reverse Voltage Leakage Current I
(VR=25Vdc,TA=25°C)
Diode Capacitance Temperature Coefficient TC
(VR=4.0Vdc,f=1.0MHz)
= 25°C P
R
F
D
J
stg
30 Vdc
200 mAdc
280 225 m W
+150 °C
–55 to +150 °C
V
(BR)R
R
C
30 — — Vdc
— — 0.1 µAdc
— 280 — ppm/°C
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MMBV2101~MMBV2109
MV2101~MV2115
–1/3
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
C T , Diode Capacitance
Device
MMBV2101LT1/MV2101 6.1 6.8 7.5 450 2.5 2. 7 3.2
MMBV2103LT1 9.0 1 0 11 400 2.5 2.9 3.2
MV2104 10.8 12 13.2 400 2.5 2.9 3.2
MMBV2105LT1/MV2105 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2107LT1 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2108LT1/MV2108 24.3 27 29.7 300 2.5 3.0 3.2
MMBV2109LT1/MV2109 29.7 33 36.3 200 2.5 3.0 3.2
MV2111 42.3 47 51.7 150 2.5 3.0 3.2
MV2115 90 100 110 100 2.6 3.0 3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
V R = 4.0 Vdc, f = 1.0 MHz
pF
Min Nom Ma x Typ Min Typ Max
Q, Figure of Merit
V R = 4.0 Vdc,
f = 50 MHz
T R, Tuning Ratio
C 2 /C
f = 1.0 MHz
30
P ARAMETER TEST METHODS
,DIODE CAPACIT ANCE TEMPERATURE
4.T C
1. C T , DIODE CAPACITANCE
= C C + C J ). C T is measured at 1.0 MHz using a
(C
T
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T
, TUNING RATIO
R
is the ratio of C T measured at 2.0 Vdc divided by
T
R
C
measured at 30 Vdc.
T
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
2πfC
G
Q =
(Booton Electronics Model 33As8 or equivalent).Use
~
Lead Length
1/16”.
~
C
COEFFICIENT
TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz,
T
= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the
A
following equation,which defines TC
C
TC C=
(+85°C)– CT(–65°C )10
T
85+65 . C
:
C
6
(25°C)
T
Accuracy limited by measurement of CT to±0.1pF.
MMBV2101~MMBV2109
MV2101~MV2115
–2/3
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