LRC MMBV105GLT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Silicon T uning Diode
This device is designed in the surface Mount package for
general frequency control and tuning applications.It provides
solid-state reliability in replacement of mechanical
tuning methods.
• Controlled and Uniform Tuning Ration
3
CATHODE
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Device Dissipation @T A = 25°C P
Derate above 25°C 1.8 mW/°C
Junction Temperature T
Storage Temperature Range T
DEVICE MARKING
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage
( I R=10µAdc)
Reverse Voltage Leakage Current
( VR =28Vdc)
1
ANODE
R
F
D
J
stg
30 Vdc
200 mAdc
225 mW
+125 °C
–55 to +150 °C
V
(BR)R
I
R
30 — Vdc
— 50 nAdc
MMBV105GLT1
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
Device Type
MMBV105GLT1
C
T
VR=25Vdc,f =1.0MHz
pF
Q
=3.0Vdc
V
R
f=50MHz
C
C3/C
f=1.0MHz
Min Max Typ Min Max
1.5 2.8 250 4.0 6.5
R
25
MMBV105GLT–1/2
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMBV105GLT1
20
18
16
14
12
10
8.0
6.0
4.0
, DIODE CAPACIT ANCE (pF)
T
2.0
C
0
0.3 0.5 1.0 2.0 3.0 5.0 10 20 30
f = 1.0MHz
= 25°C
T
A
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
, DIODE CAPACITANCE (NORMALIZED)
T
C
0.96
–75 –50 –25 0 +25 +50 +75 +100 +125
V R= 3.0Vdc
= 1.0MHz
f
1000
=3Vdc
V
R
T
= 25°C
A
100
Q , FIGURE OF MERIT
10
10 100 1000
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
T A , AMBIENT TEMPERA TURE (°C)
Figure 3. Diode Capacitance
MMBV105GLT–2/2
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