LRC MMBTH24LT1 Datasheet

VHF Mixer Transistors
NPN Silicon
LESHAN RADIO COMPANY, LTD.
3 COLLECTOR
1 BASE
2 EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current –Continuous I
CEO
CBO
EBO
C
30 Vdc 40 Vdc
4.0 Vdc 50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient R T otal Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient R Junction and Storage T emperature TJ , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
MMBTH24LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBTH24LT1 = M3A
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 )
Collector–Base Breakdown Voltage (I C = 100 µAdc , I Emitter–Base Breakdown Voltage (I E = 10 µAdc , I Collector Cutoff Current ( V CB = 15Vdc , I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 0)
E
= 0)
C
= 0 )
E
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
30 Vdc
40 Vdc
4.0
Vdc
50 nAdc
M34–1/2
LESHAN RADIO COMPANY, LTD.
MMBTH24LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol M in T yp Max Unit
ON CHARACTERISTICS
DC Current Gain (I C = 8.0 mAdc, V
= 10 Vdc)
CE
h
FE
30
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product (V CE = 10 Vdc, I C = 8.0mAdc, f = 100MHz) Collector –Base Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Conversion Gain (213MHz to 45MHz) dB (V CC= 20 Vdc, I C= 8.0mAdc, Oscillator Injection = 150 mVrms) (60MHz to 45MHz) C (V CC= 20 Vdc, I C= 8.0mAdc, Oscillator Injection = 150 mVrms)
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
C
f
T
cb
400 620 MHz
0.25 0.45 pF
19 24
G
24 20
M34–2/2
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