LRC MMBTH10LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
CEO
CBO
EBO
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
25 Vdc
30 Vdc
3.0 Vdc
P
D
θJA
P
D
θJA
stg
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
–55 to +150 °C
MMBTH10LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBTH10LT1 = 3EM
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B= 0 )
Collector–Base Breakdown Voltage
(I C = 100 µAdc , I
Emitter–Base Breakdown Voltage
(I E = 10 µAdc , I
Collector Cutoff Current
( V CB = 25Vdc , I
Emitter Cutoff Current
( V EB = 2.0Vdc , I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
C
E
= 0)
E
C
= 0)
= 0 )
= 0 )
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
I
EBO
25 — — Vdc
30 — — Vdc
3.0
—
— Vdc
— — 100 nAdc
— — 100 nAdc
M33–1/4
LESHAN RADIO COMPANY, LTD.
MMBTH10LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 4.0 mAdc, V
= 10 Vdc)
CE
Collector–Emitter Saturation Voltage
(I C = 4.0mAdc, I B = 0.4 mAdc)
Base–Emitter On Voltage
(I C = 4.0mAdc, V
= 10Vdc)
CE
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz)
Collector –Base Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Collector –Base Feedback Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Collector Base Time Constant
( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz)
= 25°C unless otherwise noted) (Continued)
A
h
FE
V
CE(sat)
V
f
C
C
rb’ C
BE
T
cb
rb
C
60 ———
— — 0.5 Vdc
— — 0.95 Vdc
650 — — MHz
— — 0.7 pF
— — 0.65 pF
— — 9.0 ps
M33–2/4
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