LRC MMBTA93LT1, MMBTA92LT1 Datasheet
High Voltage T ransistor
LESHAN RADIO COMPANY, LTD.
PNP Silicon
3
COLLECTOR
1
BASE
2
MAXIMUM RATINGS
Rating Symbol
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
Value
MMBTA92 MMBTA93
–300 –200 Vdc
–300 –200 Vdc
–5.0 Vdc
–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
D
θJA
D
θJA
stg
EMITTER
Unit
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBTA92LT1
MMBTA93LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBTA92LT1 = 2D, MMBTA93LT1 = 2E
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(I C = –1.0 mAdc, I B = 0) MMBTA92 –300 —
MMBTA93 –200 —
Collector–Emitter Breakdown Voltage V
(I C = –100 µAdc, I E = 0) MMBTA92 –300 —
MMBTA93 –200 —
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current I
( V CB = –200Vdc, I E = 0) MMBTA92 — –0.25
( V CB = –160Vdc, I E = 0) MMBTA93 — –0.25
Collector Cutoff Current
( V CB = –3.0Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I
EBO
–5.0 — Vdc
— –0.1 µAdc
Vdc
Vdc
nAdc
M32–1/3
LESHAN RADIO COMPANY, LTD.
MMBTA92LT1 MMBTA93LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (3)
DC Current Gain h
(I C =–1.0mAdc, V
(I C = –10 mAdc, V
(I C = –30mAdc, V
= –10 Vdc) Both Types 25 ––
CE
= –10Vdc) Both Types 40 ––
CE
=–10 Vdc) MMBTA92 25 ––
CE
MMBTA93 25 ––
Collector–Emitter Saturation Voltage V
(I C = –20mAdc, I B = –2.0 mAdc) MMBTA92 –– –0.5
MMBTA93 –– –0.5
Base–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
V
FE
CE(sat)
BE(sat)
— –0.9 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Collector – Base Capacitance C
(V CB = –20 Vdc, I E = 0, f = 1.0 MHz) MMBTA92 –– 6.0
MMBTA93 –– 8.0
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
f
T
cb
50 –– MHz
—
Vdc
pF
M32–2/3
Loading...