LRC MMBTA70LT1 Datasheet
General Purpose Transistor
PNP Silicon
LESHAN RADIO COMPANY, LTD.
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
EBO
C
–40 Vdc
–4.0 Vdc
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBTA70LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBTA70LT1 = M2C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current I
( V
= –30Vdc, I E = 0) — –100
CB
ON CHARACTERISTICS
DC Current Gain(I C = –5.0mAdc, V
Collector–Emitter Saturation Voltage
= –10 Vdc) h
CE
(I C = –10mAdc, I B = –1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(I C = –5.0mAdc, V CE= –10Vdc, f = 100MHz)
Output Capacitance(V CB = –10Vdc, I E = 0, f = 1.0 MHz) C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
V
V
(BR)CEO
(BR)EBO
CBO
FE
CE(sat)
f
T
obo
–40 ––
Vdc
–4.0 — Vdc
nAdc
40 400 ––
–– –0.25 Vdc
125 –– MHz
–– 4.0 pF
M31–1/5
LESHAN RADIO COMPANY, LTD.
TYPICAL NOISE CHARACTERISTICS
(V
= –5.0 Vdc, T A = 25°C)
CE
MMBTA70LT1
10
BANDWIDTH = 1.0 Hz
7.0
5.0
I C = 10 µA
R
30 µA
3.0
2.0
, NOISE VOLTAGE (nV)
n
e
1.0 mA
1.0
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
100 µA
300 µA
f, FREQUENCY (Hz)
Figure 1. Noise V oltage
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
, SOURCE RESISTANCE (OHMS)
200
S
R
100
0.5 dB
1.0 dB
10 20 30 50 70 100 200 300 500 700 1.0k
I C , COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz
Figure 3. Narrow Band, 100 Hz
10
~
0
~
S
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
, NOISE CURRENT (pA)
n
0.2
I
0.1
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
NOISE FIGURE CONTOURS
(V
= –5.0 Vdc, T A = 25°C)
CE
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0 dB
3.0 dB
5.0 dB
2.0k
1.0k
500
, SOURCE RESISTANCE (OHMS)
200
S
100
R
10 20 30 50 70 100 200 300 500 700 1.0k
BANDWIDTH = 1.0 Hz
~
R
~
I C = 1.0 mA
S
300 µA
100 µA
30 µA
10 µA
f, FREQUENCY (Hz)
Figure 2. Noise Current
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
I C , COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
8
5.0 dB
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
, SOURCE RESISTANCE (OHMS)
S
200
R
100
10 20 3 0 50 70 100 200 300 500 700 1.0k
0.5 dB
10 Hz to 15.7 kHz
1.0 dB
2.0 dB
3.0 dB
I C , COLLECTOR CURRENT (mA)
Figure 5. Wideband
5.0 dB
Noise Figure is Defined as:
4KTR
2
2
R S
n
S
1/ 2
–23
j/°K)
2
+4KTRS +I
NF = 20 log 10 (
e n
–––––––––––––––)
e n= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
= Noise Current of the Transistor referred to the input. (Figure 4)
n
K = Boltzman’s Constant (1.38 x 10
T = Temperature of the Source Resistance (°K)
R s= Source Resistance (Ohms)
M31–2/5
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