LRC MMBTA63LT1, MMBTA64LT1 Datasheet
Darlington Transistors
PNP Silicon
LESHAN RADIO COMPANY, LTD.
MMBTA63LT1
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CES
CBO
EBO
C
–30 Vdc
–30 Vdc
–10 Vdc
–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBTA64LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBTA63LT1 = 2U MMBTA64LT1 = 2V
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, )
Collector Cutoff Current
( V CB = –30Vdc)
Emitter Cutoff Current
( V EB = –10Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
I
CBO
I
EBO
–30 — Vdc
— –100 nAdc
— –100 nAdc
M30–1/3
LESHAN RADIO COMPANY, LTD.
MMBTA63LT1 MMBTA64LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(3) h
(I C = –10 mAdc, V
(I C = –10 mAdc, V
(I C = –100mAdc, V
(I C = –100mAdc, V
= –5.0 Vdc) MMBTA63 5,000 —
CE
= –5.0 Vdc) MMBTA64 10,000 —
CE
= –5.0Vdc) MMBTA63 10,000 —
CE
= –5.0Vdc) MMBTA64 20,000 —
CE
Collector–Emitter Saturation Voltage
(I C = –100 mAdc, I B = –0.1 mAdc)
Base–Emitter On Voltage
(I C = –100mAdc, V
= –5.0Vdc)
CE
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4)
(V CE = –5.0 Vdc, I C = –10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
V
V
FE
CE(sat)
BE(on)
f
––
–– –1.5 Vdc
— –2.0 Vdc
T
125 — MHz
M30–2/3
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