LRC MMBTA55LT1, MMBTA56LT1 Datasheet
Driver Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
3
COLLECTOR
1
BASE
2
EMITTER
Value
MMBTA55 MMBTA56
–60 –80 Vdc
–60 –80 Vdc
–4.0 Vdc
–500 mAdc
Unit
LESHAN RADIO COMPANY, LTD.
MMBTA55LT1
MMBTA56LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
556 °C/W
300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
Junction and Storage T emperature T J , T
stg
417 °C/W
–55 to +150 °C
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) V
(I C = –1.0 mAdc, I B= 0 ) MMBTA55 –60 —
MMBTA56 –80 —
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0 )
Collector Cutoff Current
( V CE = –60Vdc, I B = 0)
Collector Cutoff Current I
( V CB = –60Vdc, I E= 0) MMBTA55 — –0.1
( V CB = –80Vdc, I E= 0) MMBTA56 — –0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
V
(BR)CEO
(BR)EBO
I
CEO
CBO
–4.0 — Vdc
— –0.1 µAdc
Vdc
µAdc
M29–1/2
LESHAN RADIO COMPANY, LTD.
MMBTA55LT1 MMBTA56LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = –10 mAdc, V
(I C = –100mAdc, V
= –1.0 Vdc) 100 —
CE
= –1.0 Vdc) 100 —
CE
Collector–Emitter Saturation Voltage V
(I C = –100mAdc, I B = –10mAdc)
Base–Emitter On Voltage
(I C = –100mAdc, V
= –1.0Vdc)
CE
V
FE
CE(sat)
BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product(4)
(V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz)
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
f
T
—
— –0.25 Vdc
— –1.2 Vdc
50 — MHz
M29–2/2
Loading...