LRC MMBTA42LT1 Datasheet
High Voltage Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RA TINGS
Rating Symbol
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
Value
MMBTA42 MMBTA43
Unit
300 200 Vdc
300 200 Vdc
6.0 6.0 Vdc
500 mAdc
P
D
θJA
P
D
θJA
stg
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
–55 to +150 °C
MMBTA42LT1
MMBTA43LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(I C = 1.0 mAdc, I B = 0) MMBTA42 300 —
MMBTA43 200 —
Emitter–Base Breakdown Voltage V
(I C= 100 µAdc, I E= 0) MMBTA42 300 —
MMBTA43 200 —
Emitter–Base Breakdown Voltage
(I E= 100 µAdc, I C= 0)
Collector Cutoff Current I
( V CB= 200Vdc, I E= 0) MMBTA42 — 0.1
( V CB= 160Vdc, I E= 0) MMBTA43 — 0.1
Emitter Cutoff Current I
( V EB= 6.0Vdc, I C= 0) MMBTA42 — 0.1
( V EB= 4.0Vdc, I C= 0) MMBTA43 — 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
EBO
6.0 — Vdc
Vdc
Vdc
µAdc
µAdc
M28–1/3
LESHAN RADIO COMPANY, LTD.
MMBTA42LT1 MMBTA43LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (3)
DC Current Gain h
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
= 10 Vdc) Both Types 25 —
CE
= 10 Vdc) Both Types 40 —
CE
MMBTA42 40 —
(I C = 30 mAdc, V
= 10 Vdc) MMBTA43 40 —
CE
FE
––
Collector–Emitter Saturation Voltage V
CE(sat)
(I C = 20 mAdc, I B = 2.0 mAdc) MMBTA42 — 0.5
MMBTA43 — 0.5
Base–Emitter Saturation Voltage
(I C = 20 mAdc, I B= 2.0 mAdc)
V
BE(sat)
— 0.9 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product
(V CE = 20 Vdc, I C = 10mA, f = 100 MHz)
Collector – Base Capacitance C
(V CB= 20 Vdc, I E= 0, f = 1.0 MHz) MMBTA42 — 3.0
MMBTA43 — 4.0
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
f
T
cb
50 — MHz
Vdc
pF
M28–2/3
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