General Purpose Amplifier
NPN Silicon
3
COLLECTOR
LESHAN RADIO COMPANY, LTD.
MMBTA20LT1
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
EBO
C
40 Vdc
4.0 Vdc
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT A20LT1 = 1C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B= 0)
Emitter–Base Breakdown Voltage
(I E = 100 µAdc, I C= 0 )
Collector Cutoff Current
( V CB = 30Vdc , I E = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
V
(BR)CEO
(BR)EBO
I
CBO
40 — Vdc
4.0 — Vdc
— 100 nAdc
M27–1/6
LESHAN RADIO COMPANY, LTD.
MMBTA20LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 5.0 mAdc, V
= 10 Vdc)
CE
Collector–Emitter Saturation Voltage(3)
(I C = 10mAdc, I B = 1.0mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product
(V CE = 10Vdc, I C = 5.0 mAdc, f = 100MHz)
Output Capacitance
(V CB = 10Vdc,I E= 0, f = 1.0 MHz)
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+10.9 V
10 k
= 25°C unless otherwise noted) (Continued)
A
h
FE
V
CE(sat)
f
T
C
obo
+3.0 V
275
C S < 4.0 pF*
10 < t
< 500 µs
DUTY CYCLE = 2%
1
0
– 9.1 V
40 400 —
— 0.25 Vdc
125 — MHz
— 4.0 pF
+3.0 V
t
1
+10.9 V
275
10 k
1N916
<1.0 ns
C S < 4.0 pF*
Figure 1. Turn–On Time
*Total shunt capacitance of test jig and connectors
Figure 2. Turn–Off Time
M27–2/6