LRC MMBTA13LT1, MMBTA14LT1 Datasheet

Darlington Amplifier Transistors
NPN Silicon
LESHAN RADIO COMPANY, LTD.
3 COLLECTOR
1 BASE
2 EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current — Continuous I
CES
CBO
EBO
C
30 Vdc 30 Vdc 10 Vdc
300 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient R T otal Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient R Junction and Storage T emperature T J , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
MMBTA13LT1 MMBTA14L T1
3
1
2
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT A13LT1 = 1M; MMBT A14LT1 = 1N
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 100 µAdc, V Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 0)
BE
V
(BR)CEO
I
CBO
I
EBO
30 Vdc
100 nAdc
100 nAdc
M26–1/5
LESHAN RADIO COMPANY, LTD.
MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (3)
DC Current Gain h (I C = 10 mAdc, V
= 5.0 Vdc) MMBTA13 5,000
CE
MMBTA14 10,000
(I C = 100mAdc, V
= 5.0Vdc) MMBTA13 10,000
CE
MMBTA14 20,000 — Collector–Emitter Saturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) Base–Emitter On Voltage (I C = 100mAdc, V
= 5.0Vdc)
CE
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4) (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
4. f T = |h f e | *f
test
.
R
S
i
n
V
FE
CE(sat)
V
––
–– 1.5 Vdc
BE
f
T
2.0 Vdc
125 MHz
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
M26–2/5
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