Darlington Amplifier Transistors
NPN Silicon
LESHAN RADIO COMPANY, LTD.
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CES
CBO
EBO
C
30 Vdc
30 Vdc
10 Vdc
300 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
MMBTA13LT1
MMBTA14L T1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT A13LT1 = 1M; MMBT A14LT1 = 1N
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 100 µAdc, V
Collector Cutoff Current
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current
( V EB = 10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 0)
BE
V
(BR)CEO
I
CBO
I
EBO
30 — Vdc
— 100 nAdc
— 100 nAdc
M26–1/5
LESHAN RADIO COMPANY, LTD.
MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (3)
DC Current Gain h
(I C = 10 mAdc, V
= 5.0 Vdc) MMBTA13 5,000 —
CE
MMBTA14 10,000 —
(I C = 100mAdc, V
= 5.0Vdc) MMBTA13 10,000 —
CE
MMBTA14 20,000 —
Collector–Emitter Saturation Voltage
(I C = 100 mAdc, I B = 0.1 mAdc)
Base–Emitter On Voltage
(I C = 100mAdc, V
= 5.0Vdc)
CE
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4)
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
4. f T = |h f e | *f
test
.
R
S
i
n
V
FE
CE(sat)
V
––
–– 1.5 Vdc
BE
f
T
— 2.0 Vdc
125 — MHz
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
M26–2/5
LESHAN RADIO COMPANY, LTD.
MMBTA13LT1 MMBT A14LT1
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
500
200
100
50
BANDWIDTH = 1.0 Hz
~
R S 0
~
100µA
20
, NOISE VOLTAGE (nV)
n
10
e
5.0
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
IC=1.0mA
f, FREQUENCY (Hz)
Figure 2. Noise V oltage
200
BANDWIDTH = 10 Hz TO 15.7 kHz
100
70
I C = 10 µA
50
100 µA
30
20
1.0 mA
, TOTAL WIDEBAND NOISE VOLTAGE (nV)
10
T
V
1.0 2.0 5.0 10 20 50 100 200 500 1.0k
10 µA
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
, NOISE CURRENT (pA)
0.05
n
I
0.03
0.02
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz
IC=1.0mA
100µA
10µA
f, FREQUENCY (Hz)
Figure 3. Noise Current
500
200
100
50
20
I
= 1.0 mA
NF, NOISE FIGURE (dB)
C
10
5.0
1.0 2.0 5.0 10 20 50 100 200 500 1.0k
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
R S , SOURCE RESISTANCE (kΩ)
Figure 4. Total W ideband Noise Voltage
R S , SOURCE RESISTANCE (kΩ)
Figure 5. Wideband Noise Figure
M26–3/5
LESHAN RADIO COMPANY, LTD.
MMBT A13LT1 MMBTA14LT1
SMALL–SIGNAL CHARACTERISTICS
20
T J =25
10
7.0
5.0
3.0
C, CAPACITANCE (pF)
2.0
0.04 0.1 0.2 0.4 1.0 1.2 4.0 10 20 40
°C
C
V R, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
200k
T J= 125°C
100k
70k
50k
30k
20k
10k
7.0k
, DC CURRENT GAIN
FE
5.0k
h
3.0k
2.0k
5.0 7.0 10 20 30 50 70 100 200 300 500
25°C
–55°C
V CE= 5.0V
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
4.0
V
= 5.0 V
CE
f = 100 MHz
2.0
T J = 25°C
ibo
C
obo
1.0
0.8
0.6
0.4
|, SMALL– SIGNAL CURRENT GAIN
0.2
fe
|h
0.5 1.0 2.0 5.0 10 20 50 100 2 00 500
I C , COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
3.0
T J= 25°C
2.5
I
= 10mA
C
2.0
1.5
1.0
0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
CE
V
50 mA
250mA 500mA
I B , BASE CURRENT (µA)
Figure 9. Collector Saturation Region
1.6
T J = 25°C
1.4
V
@ I C /I B = 1000
BE(sat)
1.2
V
@ V
BE(on)
1.0
0.8
V, VOLTAGE ( VOLTS )
V
CE(sat)
0.6
5.0 7.0 10 20 30 50 70 100 200 300 500
= 5.0 V
CE
@ I C /I B = 1000
C , COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
–1.0
*APPLIES FOR I C /I B <
* R
–2.0
θVC
for V
CE(sat)
h
/3.0
FE
+25°C TO +125°C
–55°C TO +25°C
–3.0
+25°C TO +125°C
–4.0
θ
for V
VB
BE
–5.0
–6.0
, TEMPERATURE COEFFICIENTS (mV/°C)
5.0 7.0 10 20 30 50 70 100 200 300 500
θV
R
I C , COLLECTOR CURRENT (mA)
–55°C TO +25°C
Figure 18. Temperature Coefficients
M26–4/5
LESHAN RADIO COMPANY, LTD.
MMBTA13LT1 MMBTA14LT1
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
1.0k
700
500
300
T A = 25°C
200
0.1
0.05
SINGLE PULSE
SINGLE PULSE
T C = 25°C
t, TIME (ms)
Figure 12. Thermal Response
1.0 ms
100µs
1.0 s
Z
Z
θJC(t)
θJA(t)
= r(t) • R
= r(t) • R
FIGURE A
T
– T C = P
θJC
J(pk)
T
θJA
J(pk)
t
P
P
P
– T A = P
(pk) Z θJC(t)
(pk) Z θJA(t)
P
P
100
70
50
30
, COLLECTOR CURRENT (mA)
C
20
I
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
V CE , COLLECTOR–EMITTER VOL TAGE (VOLTS)
Figure 13.Active Region Safe Operating Area
t
1
1/f
t
DUTY CYCLE =t
PEAK PULSE POWER = P
1
f =
1
t
P
P
Design Note: Use of Transient Thermal
Resistance Data
M26–5/5
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