Darlington Amplifier Transistors
NPN Silicon
LESHAN RADIO COMPANY, LTD.
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CES
CBO
EBO
C
30 Vdc
30 Vdc
10 Vdc
300 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
MMBTA13LT1
MMBTA14L T1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT A13LT1 = 1M; MMBT A14LT1 = 1N
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 100 µAdc, V
Collector Cutoff Current
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current
( V EB = 10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 0)
BE
V
(BR)CEO
I
CBO
I
EBO
30 — Vdc
— 100 nAdc
— 100 nAdc
M26–1/5
LESHAN RADIO COMPANY, LTD.
MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (3)
DC Current Gain h
(I C = 10 mAdc, V
= 5.0 Vdc) MMBTA13 5,000 —
CE
MMBTA14 10,000 —
(I C = 100mAdc, V
= 5.0Vdc) MMBTA13 10,000 —
CE
MMBTA14 20,000 —
Collector–Emitter Saturation Voltage
(I C = 100 mAdc, I B = 0.1 mAdc)
Base–Emitter On Voltage
(I C = 100mAdc, V
= 5.0Vdc)
CE
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4)
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
4. f T = |h f e | *f
test
.
R
S
i
n
V
FE
CE(sat)
V
––
–– 1.5 Vdc
BE
f
T
— 2.0 Vdc
125 — MHz
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
M26–2/5