LRC MMBTA05LT1, MMBTA06LT1 Datasheet
Driver Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
3
COLLECTOR
1
BASE
2
EMITTER
Value
MMBTA05 MMBTA06
60 80 Vdc
60 80 Vdc
4.0 Vdc
500 mAdc
Unit
LESHAN RADIO COMPANY, LTD.
MMBTA05LT1
MMBTA06LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
DEVICE MARKING
MMBTA05LT1 = 1H, MMBTA06LT1 = 1GM
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(I C = 1.0 mAdc, I B = 0) MMBTA05 60 —
MMBTA06 80 —
Emitter–Base Breakdown Voltage V
(I E = 100 µAdc, I C = 0)
Collector Cutoff Current I
( V CE = 60Vdc, I B = 0)
Emitter Cutoff Current I
( V CB = 60Vdc, I E = 0) MMBTA05 — 0.1
( V CB = 80Vdc, I E = 0) MMBTA06 — 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
(BR)CEO
(BR)EBO
CES
CBO
4.0 — Vdc
— 0.1 µAdc
Vdc
µAdc
M25–1/2
LESHAN RADIO COMPANY, LTD.
MMBTA05LT1 MMBTA06LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = 10 mAdc, V
(I C = 100 mAdc, V
= 1.0 Vdc) 100 —
CE
= 1.0 Vdc) 100 —
CE
Collector–Emitter Saturation Voltage V
(I C = 100 mAdc, I B = 10 mAdc) — 0.25
Base–Emitter On Voltage V
(I C = 100 mAdc, V CE= 1.0 Vdc) — 1.2
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain – Bandwidth Product(4)
(V CE = 2.0 V, I C = 10mA, f = 100 MHz)
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
f
T
100 — MHz
––
Vdc
Vdc
M25–2/2
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