LRC MMBT6520LT1 Datasheet
High Voltage Transistor
PNP Silicon
3
COLLECTOR
LESHAN RADIO COMPANY, LTD.
MMBT6520LT1
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Base Current I
Collector Current — Continuous I
CEO
CBO
EBO
B
C
–350 Vdc
–350 Vdc
–5.0 Vdc
–250 mA
–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT6520L T1 = 2Z
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = –1.0 mA ) V
Collector–Base Breakdown Voltage(I E = –100 µA ) V
Emitter–Base Breakdown Voltage(I E = –10 µA) V
Collector Cutoff Current( V CB = –250V ) I
Emitter Cutoff Current( V EB = –4.0V ) I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
(BR)CEO
(BR)CBO
(BR)EBO
CBO
EBO
–350 — Vdc
–350 — Vdc
–5.0 — Vdc
— –50 nA
— –50 nA
M24–1/5
LESHAN RADIO COMPANY, LTD.
MMBT6520LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = –1.0 mAdc, V
(I C = –10mAdc, V
(I C = –30 mAdc, V
(I C = –50 mAdc, V
(I C = –100 mAdc, V
= –10 Vdc) 20 —
CE
= –10 Vdc) 30 —
CE
= –10 Vdc) 30 200
CE
= –10 Vdc) 20 200
CE
= –10 Vdc) 15 —
CE
Collector–Emitter Saturation Voltage V
(I C = –10mAdc, I B = –1.0mAdc) — –0.30
(I C = –20 mAdc, I B = –2.0 mAdc) — –0.35
(I C = –30 mAdc, I B = –3.0mAdc) — –0.50
(I C = –50 mAdc, I B = –5.0 mAdc) — –1.0
Base – Emitter Saturation Voltage V
(I C = –10mAdc, I B = –1.0mAdc,) — –0.75
(I C = –20mAdc, I B = –2.0mAdc,) — –0.85
(I C = –30mAdc, I B = –3.0mAdc,) — –0.90
Base–Emitter On Voltage
(I C = –100mAdc, V
= –10V )
CE
V
FE
CE(sat)
BE(sat)
BE(on)
— –2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = –20 V, I C = –10mA, f = 20 MHz)
Collector –Base Capacitance
(V CB = –20 V, f = 1.0 MHz)
Emitter –Base Capacitance
(V EB= –0.5 V, f = 1.0 MHz)
C
C
f
T
cb
eb
40 200 MHz
— 6.0 pF
— 100 pF
—
Vdc
Vdc
M24–2/5
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