LRC MMBT6517LT1 Datasheet
High Voltage Transistors
NPN Silicon
LESHAN RADIO COMPANY, LTD.
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Base Current I
Collector Current — Continuous I
CEO
CBO
EBO
B
C
350 Vdc
350 Vdc
5.0 Vdc
250 mAdc
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBT6517LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc )
Collector–Base Breakdown Voltage
(I C = 100 µAdc )
Emitter–Base Breakdown Voltage
(I E = 10 µAdc )
Collector Cutoff Current
( V CB = 250Vdc )
Emitter Cutoff Current
( V EB = 5.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
I
EBO
350 — Vdc
350 — Vdc
6.0 — Vdc
— 50 nAdc
— 50 nAdc
M23–1/5
LESHAN RADIO COMPANY, LTD.
MMBT6517LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = 1.0 mAdc, V
(I C = 10mAdc, V
(I C = 30 mAdc, V
(I C = 50 mAdc, V
(I C = 100 mAdc, V
= 10 Vdc) 20 —
CE
= 10 Vdc) 30 —
CE
= 10 Vdc) 30 200
CE
= 10 Vdc) 20 200
CE
= 10 Vdc) 15 —
CE
Collector–Emitter Saturation Voltage(3) V
(I C = 10mAdc, I B = 1.0mAdc) — 0.30
(I C = 20 mAdc, I B = 2.0 mAdc) — 0.35
(I C = 30 mAdc, I B = 3.0mAdc) — 0.50
(I C = 50 mAdc, I B = 5.0 mAdc) — 1.0
Base – Emitter Saturation Voltage V
(I C = 10mAdc, I B = 1.0mAdc,) — 0.75
(I C = 20mAdc, I B = 2.0mAdc,) — 0.85
(I C = 30mAdc, I B = 3.0mAdc,) — 0.90
Base–Emitter On Voltage
(I C = 100mAdc, V
= 10Vdc)
CE
V
FE
CE(sat)
BE(sat)
BE(on)
— 2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 20 Vdc, I C = 10mAdc, f = 20 MHz)
Collector –Base Capacitance
(V CB = 20 Vdc, f = 1.0 MHz)
Emitter –Base Capacitance
(V EB=0.5 Vdc, f = 1.0 MHz)
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
C
C
f
T
cb
eb
40 200 MHz
— 6.0 pF
—80pF
—
Vdc
Vdc
M23–2/5
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