LRC MMBT6428LT1, MMBT6429LT1 Datasheet
Amplifier Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
Value
6428LT 1 6429LT1
50 45 Vdc
60 55 Vdc
6.0 Vdc
200 mAdc
P
D
θJA
P
D
θJA
stg
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
–55 to +150 °C
MMBT6428LT1
MMBT6429LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT6428L T1 = 1KM, MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(I C = 1.0 mAdc, I B = 0) MMBT6428 50 —
(I C = 1.0 mAdc, I B = 0) MMBT6429 45 —
Collector–Base Breakdown Voltage V
(I C = 0.1mAdc, I E = 0) MMBT6428 60 —
(I C = 0.1mAdc, I E = 0) MMBT6429 55 —
Collector Cutoff Current I
( V CE = 30Vdc, ) — 0.1
Collector Cutoff Current I
( V CB = 30Vdc, I E = 0 ) — 0.01
Emitter Cutoff Current
( V EB = 5.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
(BR)CEO
(BR)CBO
CBO
CBO
I
EBO
— 0.01 µAdc
Vdc
Vdc
µAdc
µAdc
M22–1/4
LESHAN RADIO COMPANY, LTD.
MMBT6428LT1 MMBT6429LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = 0.01 mAdc, V
= 5.0 Vdc) MMBT6428 250 —
CE
MMBT6429 500 —
(I C = 0.1 mAdc, V
= 5.0Vdc) MMBT6428 250 650
CE
MMBT6429 500 1250
(I C = 1.0 mAdc, V
= 5.0Vdc) MMBT6428 250 —
CE
MMBT6429 500 —
(I C = 10 mAdc, V
= 5.0Vdc) MMBT6428 250 —
CE
MMBT6429 500 —
Collector–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 0.5 mAdc) –– 0.2
(I C = 100 mAdc, I B = 0.5 mAdc) –– 0.6
Base–Emitter On Voltage
(I C = 1.0 mAdc, V
= 5.0mAdc)
CE
V
FE
CE(sat)
BE(on)
0.56 0.66 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)
f
T
C
obo
C
ibo
100 700 MHz
–– 3.0 pF
–– 8.0 pF
––
Vdc
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
M22–2/4
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