LRC MMBT6427LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Darlington Transistors
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
40 Vdc
40 Vdc
12 Vdc
500 mAdc
D
θJA
D
θJA
–55 to +150 °C
stg
225 mW
556 °C/W
300 mW
417 °C/W
MMBT6427LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT6427LT1 = 1V
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 10 mAdc, V
Collector–Base Breakdown Voltage
(I C = 100 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CE = 25Vdc, I B = 0)
Collector Cutoff Current
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current
( V EB = 10Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 0)
BE
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CES
I
CBO
I
EBO
40 — Vdc
40 — Vdc
12 — Vdc
— 1.0 µAdc
— 50 nAdc
— 50 nAdc
M21–1/5
LESHAN RADIO COMPANY, LTD.
MMBT6427LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = 10 mAdc, V
(I C = 100 mAdc, V
(I C = 500 mAdc, V
= 5.0 Vdc) 10,000 100,000
CE
= 5.0Vdc) 20,000 200,000
CE
= 5.0Vdc) 14,000 140,000
CE
Collector–Emitter Saturation Voltage V
(I C = 50 mAdc, I B = 0.5 mAdc) –– 1.2
(I C = 500 mAdc, I B = 0.5 mAdc) –– 1.5
Base–Emitter Saturation Voltage
(I C = 500 mAdc, I B = 0.5 mAdc)
Base–Emitter On Voltage
(I C = 50 mAdc, V
= 5.0Vdc)
CE
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz)
Current Gain–High Frequency
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
Noise Finure
(V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 kΩ, f = 1.0 kHz )
3. Pulse Tent: Pulse Width = 300µs, Duty Cycle = 2.0%
FE
(3) Vdc
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
C
ibo
|h
| 1.3 — Vdc
fe
–– 2.0 Vdc
— 1.75 Vdc
–– 7.0 pF
–– 15 pF
NF — 10 dB
––
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
M21–2/5
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