LRC MMBT5551LT1, MMBT5550LT1 Datasheet
High Voltage Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
1
BASE
MAXIMUM RATINGS
3
COLLECTOR
2
EMITTER
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
140 Vdc
160 Vdc
6.0 Vdc
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
MMBT5550LT1
MMBT5551LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT5550LT1 = M1F, MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(I C = 1.0 mAdc, I B = 0) MMBT5550 140 —
MMBT5551 160 —
Collector–Base Breakdown Voltage V
(I C = 100 µAdc, I E = 0) MMBT5550 160 —
MMBT5551 180 —
Emitter–Base Breakdown Voltage V
(I E = 10 µAdc, I C = 0) 6.0 —
Collector Cutoff Current I
( V CB = 100Vdc, I E = 0) MMBT5550 — 100 nAdc
( V CB = 120Vdc, I E = 0) MMBT5551 — 50
( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550 — 100 µAdc
( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551 — 50
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse T est: Pulse W idth = 300 µs, Duty Cycle = 2.0%.
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I
EBO
— 50 nAdc
Vdc
Vdc
Vdc
M20–1/4
LESHAN RADIO COMPANY, LTD.
MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = 1.0 mAdc, V
= 5.0 Vdc) MMBT5550 60 —
CE
MMBT5551 80 —
(I C = 10 mAdc, V
= 5.0 Vdc) MMBT5550 60 250
CE
MMBT5551 80 250
(I C = 50 mAdc, V
= 5.0Vdc) MMBT5550 20 —
CE
MMBT5551 30 —
Collector–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 1.0 mAdc) Both Types — 0.15
(I C = 50 mAdc, I B = 5.0 mAdc ) MMBT5550 — 0.25
MMBT5551 — 0.20
Base–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 1.0 mAdc) Both Types — 1.0
FE
CE(sat)
BE(sat)
––
Vdc
Vdc
(I C = 50 mAdc, I B = 5.0 mAdc) MMBT5550 — 1.2
MMBT5551 — 1.0
M20–2/4
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