High Voltage Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
1
BASE
MAXIMUM RATINGS
3
COLLECTOR
2
EMITTER
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
140 Vdc
160 Vdc
6.0 Vdc
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
225 mW
1.8 mW/°C
θJA
P
D
556 °C/W
300 mW
2.4 mW/°C
θJA
stg
417 °C/W
–55 to +150 °C
MMBT5550LT1
MMBT5551LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT5550LT1 = M1F, MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(I C = 1.0 mAdc, I B = 0) MMBT5550 140 —
MMBT5551 160 —
Collector–Base Breakdown Voltage V
(I C = 100 µAdc, I E = 0) MMBT5550 160 —
MMBT5551 180 —
Emitter–Base Breakdown Voltage V
(I E = 10 µAdc, I C = 0) 6.0 —
Collector Cutoff Current I
( V CB = 100Vdc, I E = 0) MMBT5550 — 100 nAdc
( V CB = 120Vdc, I E = 0) MMBT5551 — 50
( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550 — 100 µAdc
( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551 — 50
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse T est: Pulse W idth = 300 µs, Duty Cycle = 2.0%.
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I
EBO
— 50 nAdc
Vdc
Vdc
Vdc
M20–1/4
LESHAN RADIO COMPANY, LTD.
MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = 1.0 mAdc, V
= 5.0 Vdc) MMBT5550 60 —
CE
MMBT5551 80 —
(I C = 10 mAdc, V
= 5.0 Vdc) MMBT5550 60 250
CE
MMBT5551 80 250
(I C = 50 mAdc, V
= 5.0Vdc) MMBT5550 20 —
CE
MMBT5551 30 —
Collector–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 1.0 mAdc) Both Types — 0.15
(I C = 50 mAdc, I B = 5.0 mAdc ) MMBT5550 — 0.25
MMBT5551 — 0.20
Base–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 1.0 mAdc) Both Types — 1.0
FE
CE(sat)
BE(sat)
––
Vdc
Vdc
(I C = 50 mAdc, I B = 5.0 mAdc) MMBT5550 — 1.2
MMBT5551 — 1.0
M20–2/4
LESHAN RADIO COMPANY, LTD.
MMBT5550LT1 MMBT5551LT1
500
300
200
T J = +125°C
+25°C
100
–55°C
50
30
20
10
7.0
, DC CURRENT GAIN (NORMALIZED)
FE
5.0
h
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
= 25°C
T
J
0.8
V
V
= 1.0 V
CE
= 5.0 V
CE
I C = 1.0 mA
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
, COLLECTOR EMITTER VOL TAGE (VOLTS)
CE
V
0.6
0.4
0.2
0
10 mA 30 mA
100 mA
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1
10
V
= 30 V
CE
0
10
T
–1
10
–2
10
–3
10
–4
10
, COLLECTOR CURRENT (µA)
C
I
–5
10
–0.4 –0.3 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
= 125°C
J
75°C
REVERSE
25°C
= I
I
C
CES
FORWARD
1.0
T
= 25°C
J
0.8
V
@ I C /I B = 10
BE(sat)
0.6
0.4
0.2
V, VOLTAGE (VOLTS)
V
@ I C /I B = 10
CE(sat)
0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 1 0 20 3 0 50 100
V
, BASE–EMITTER VOLTAGE (VOLTS)
BE
Figure 3. Collector Cut–Off Region
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
M20–3/4
2.5
2
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
, TEMPERATURE COEFFICIENT (mV/°C)
V
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
θ
T J = –55°C to +135°C
θ
for V
VC
CE(sat)
θ
for V
VB
BE(sat)
I C , COLLECTOR CURRENT (mA)
Figure 5. T emperature Coefficients
LESHAN RADIO COMPANY, LTD.
MMBT5550LT1 MMBT5551LT1
10.2 V
V
in
10 ms
INPUT PULSE
t r , t f <
10 ns
DUTY CYCLE = 1.0%
Values Shown are for I C @ 10 mA
Figure 6. Switching Time T est Circuit
V
in
V
0.25 mF
BB
–8.8 V
100
R
5.1 k
100
V
CC 30 V
R
3.0 k
B
1N914
C
V
out
100
7.0
5.0
3.0
2.0
70
50
30
20
10
C
T J = 25°C
ibo
C, CAPACITANCE (pF)
1.0
0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 20
V R , REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances Figure
5000
3000
2000
1000
500
1000
500
300
200
100
C
obo
t, TIME (ns)
@ V
= 30 V
t
r
CC
t
@ V
= 1.0 V
d
V
EB(off)
= 120 V
CC
50
30
20
10
0.2 0.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100 200
t r @ V
= 120 V
CC
/I B = 10
I
C
T
J
= 25°C
I C , COLLECTOR CURRENT (mA)
8. Turn–On Time
/I B = 10
I
t
@ V
f
= 120 V
CC
t
@ V
f
CC
= 30 V
C
T
= 25°C
J
300
t
@ V
= 120 V
s
200
CC
t, TIME (ns)
100
50
0.2 0.3 0.5 1.0 2.03.0 5.0 10 2 0 30 50 100 200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
M20–4/4
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