LRC MMBT5401LT1 Datasheet
High Voltage Transistor
PNP Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (1) P
T A =25 °C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
D
θJA
D
θJA
stg
– 150 Vdc
– 160 Vdc
– 5.0 Vdc
– 500 mAdc
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150
LESHAN RADIO COMPANY, LTD.
MMBT5401LT1
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
°C
DEVICE MARKING
MMBT5401LT1=2L
ELECTRICAL CHA RACTERISTICS (T
= 25°C unless otherwise noted)
A
Character istic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Brea kdown Voltage V
(I C = –1.0 mAdc, I B = 0) – 150 —
Collector–Base Breakdown Voltage V
(I C = –100 µAdc, I E = 0) – 160 —
Emitter-BAse Breakdown Voltage V
(I E= –10µAdc,I C=0) -5.0 —
Collector Cutoff Current I
(V
= –120 Vdc, IE= 0) — – 50 nAdc
CB
(V
= –120 Vdc, IE= 0, T A=100 °C) — – 50 µAdc
CB
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
(BR)CEO
(BR)CBO
(BR)EBO
CES
Vdc
Vdc
Vdc
M19–1/4
LESHAN RADIO COMPANY, LTD.
MMBT5401LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS (2)
DC Current Gain h
(IC = –1.0mAdc, V
(IC = –10 mAdc, V
(IC = –50 mAdc, V
= –5.0 Vdc) 50 ––
CE
= –5.0 Vdc) 60 240
CE
= –5.0 Vdc) 50 ––
CE
Collector–Emitter Saturation Voltage V
(IC = –10 mAdc, IB = –1.0 mAdc) –– – 0.2
(IC = –50 mAdc, I B = –5.0 mAdc) –– – 0.5
Base–Emitter Saturation Voltage V
(I
= –10 mAdc, I B = –1.0 mAdc) –– – 1.0
C
(I
= –50 mAdc, I
C
= –5.0 mAdc) –– – 1.0
B
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f
(IC = –10 mAdc, V CE= –10 Vdc, f = 100 MHz) 100 300
Output Capacitance C
(VCB= –10 Vdc, I E = 0, f = 1.0 MHz) –– 6.0
Small–Signal Current Gain h
(IC= –1.0mAdc, V
= –10Vdc, f = 1.0 kHz) 40 200
CE
Noise Figure N F dB
(IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz) –– 8.0
T
obo
fe
––
Vdc
Vdc
MHz
pF
—
M19–2/4
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