High Voltage Transistor
PNP Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (1) P
T A =25 °C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
D
θJA
D
θJA
stg
– 150 Vdc
– 160 Vdc
– 5.0 Vdc
– 500 mAdc
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150
LESHAN RADIO COMPANY, LTD.
MMBT5401LT1
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
°C
DEVICE MARKING
MMBT5401LT1=2L
ELECTRICAL CHA RACTERISTICS (T
= 25°C unless otherwise noted)
A
Character istic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Brea kdown Voltage V
(I C = –1.0 mAdc, I B = 0) – 150 —
Collector–Base Breakdown Voltage V
(I C = –100 µAdc, I E = 0) – 160 —
Emitter-BAse Breakdown Voltage V
(I E= –10µAdc,I C=0) -5.0 —
Collector Cutoff Current I
(V
= –120 Vdc, IE= 0) — – 50 nAdc
CB
(V
= –120 Vdc, IE= 0, T A=100 °C) — – 50 µAdc
CB
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
(BR)CEO
(BR)CBO
(BR)EBO
CES
Vdc
Vdc
Vdc
M19–1/4
LESHAN RADIO COMPANY, LTD.
MMBT5401LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS (2)
DC Current Gain h
(IC = –1.0mAdc, V
(IC = –10 mAdc, V
(IC = –50 mAdc, V
= –5.0 Vdc) 50 ––
CE
= –5.0 Vdc) 60 240
CE
= –5.0 Vdc) 50 ––
CE
Collector–Emitter Saturation Voltage V
(IC = –10 mAdc, IB = –1.0 mAdc) –– – 0.2
(IC = –50 mAdc, I B = –5.0 mAdc) –– – 0.5
Base–Emitter Saturation Voltage V
(I
= –10 mAdc, I B = –1.0 mAdc) –– – 1.0
C
(I
= –50 mAdc, I
C
= –5.0 mAdc) –– – 1.0
B
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f
(IC = –10 mAdc, V CE= –10 Vdc, f = 100 MHz) 100 300
Output Capacitance C
(VCB= –10 Vdc, I E = 0, f = 1.0 MHz) –– 6.0
Small–Signal Current Gain h
(IC= –1.0mAdc, V
= –10Vdc, f = 1.0 kHz) 40 200
CE
Noise Figure N F dB
(IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz) –– 8.0
T
obo
fe
––
Vdc
Vdc
MHz
pF
—
M19–2/4
LESHAN RADIO COMPANY, LTD.
MMBT5401LT1
200
150
100
70
50
, CURRENT GAIN
FE
30
h
20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
, COLLECTOR– EMITTER VOL T AGE (VOL TS)
CE
V
T J=125°C
25°C
–55°C
I C =1.0mA
V
= –1.0 V
CE
V
= –5.0 V
CE
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
10mA
30 mA
I B , BASE CURRENT (mA)
100 mA
Figure 2. Collector Saturation Region
3
10
= 30 V
V
CE
2
10
= I
I
C
1
10
CES
TJ = 125°C
0
10
-1
10
-2
10
, COLLECTOR CURRENT (µA)
C
-3
I
10
- 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
75°C
REVERSE
FORWARD
25°C
V
, BASE–EMITTER VOLTAGE (VOL TS)
BE
Figure 3. Collector Cut–Off Region
M19–3/4
LESHAN RADIO COMPANY, LTD.
MMBT5401LT1
1.0
T J =25°C
0.9
0.8
0.7
V
@ I C /I B =10
BE(sat)
0.6
0.5
0.4
0.3
V, VOLTAGE (VOLTS)
0.2
0.1
0
V
@ I C /I B =10
CE(sat)
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
V
BB
10.2V
V
, t f < 10 ns
t
r
in
10µs
INPUT PULSE
0.25µF
V
+8.8 V
100
R
B
5.1 k
in
100
DUTY CYCLE = 1.0%
Values Shown are for I C @ 10 mA
Figure 6. Switching Time Test Circuit
3.0 k
1N914
2.5
2.0
1.5
1.0
0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
, TEMPERATURE COEFFICIENT (mV/° C)
V
= –55°C to 135°C
T
J
for V
θ
VC
CE(sat)
θ
for V
VB
BE(sat)
I C , COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
V
CC
–30 V
R
C
V
out
100
70
50
30
20
10
7.0
5.0
3.0
2.0
C, CAPACITANCE (pF) θ
1.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
C
ibo
V R , REVERSE VOLTAGE (VOLTS)
T
=25°C
J
C
obo
Figure 7. Capacitances
1000
t, TIME (ns)
/I B =10
I
C
700
500
= 25°C
T
J
300
200
100
70
50
30
20
10
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 2 00
t
V
@ V
d
= 120V
CC
t
@V CC= 120V
r
t
= 1.0V
BE(off)
I C , COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
@V CC= 30V
r
100
70
I C /I B= 10
50
= 25°C
T
J
30
20
t
@ V CC= 30V
f
10
7.0
5.0
t, TIME (ns)
3.0
2.0
1.0
0.20.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
@V CC= 120V
t
s
t
f @VCC
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
= 120V
M19–4/4
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