LRC MMBT5088LT1, MMBT5089LT1 Datasheet
LESHAN RADIO COMPANY, LTD.
Low Noise T ransistors
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol 5088LT 15089LT1 Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
C
ollector Current — Continuous
CEO
CBO
EBO
I C 50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol M a x Unit
Total Device Dissipation FR- 5 Board (1) P
T A =25 °C
Derate above 25 °C 1.8 mW/ °C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate,( 2) TA=25°C
Derate above 25°C 2.4 mW/ °C
Thermal Resistance,Junction to Ambient R
Junction and Storage Temperature T
30 25 Vdc
35 30 Vdc
4.5 Vdc
D
θJA
D
θJA
, T
J
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to + 150
MMBT5088LT1
MMBT5089LT1
3
1
2
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
°C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V
(I C = 1.0 mAdc, I B = 0) MMBT5088 30 —
MMBT5089 25 —
Collector–Base Breakdown Voltage V
(I C = 100 µAdc, I E = 0) MMBT5088 35 —
MMBT5089 30 —
Collector Cutoff Current I
(V
= 20 Vdc, I E = 0 ) MMBT5088 — 50
CB
(V
= 15 Vdc, I E = 0 ) MMBT5089 — 50
CB
Emitter Cutoff Current I
(V
= 3.0Vdc, I C = 0) MMBT5088 — 50
EB(off)
(V
= 4.5Vdc, I C = 0) MMBT5089 — 1 0 0
EB(off)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
(BR)CEO
(BR)CBO
CBO
EBO
Vdc
Vdc
nAdc
nAdc
M18–1/4
LESHAN RADIO COMPANY, LTD.
MMBT5088LT1 PNP MMBT5089LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS
DC Current Gain h
(IC=100µAdc,VCE=5.0Vdc) MMBT5088 300 900
MMBT5089 400 1200
(IC=1.0mAdc,V
=5.0Vdc) MMBT5088 350 —
CE
MMBT5089 450 —
(IC = 10mAdc, VCE=5.0Vdc) MMBT5088 300 —
MMBT5089 400 —
Collector–Emitter Saturation Voltage V
(IC=10mAdc,IB=1.0mAdc) — 0.5
Base–Emitter Saturation Voltage V
(IC =10mAdc,IB=1.0mAdc) — 0.8
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f
(IC= 500 µAdc,VCE=5.0Vdc,f=20MHz) 50 —
Collector–Base Capacitance C
(VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded) — 4.0
Emitter–Base Capacitance C
(VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded) — 10
Small Signal Current Gain h
(IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz) MMBT5088 350 1400
MMBT5089 450 1800
Noise Figure N F dB
(IC=100µAdc,VCE=5.0Vdc, RS=10κΩ,f=1.0kHz) MMBT5088 — 3.0
MMBT5089 — 2.0
T
cb
eb
fe
—
Vdc
Vdc
MHz
pF
pF
—
R
S
i
n
IDEAL
TRANSISTOR
~
e
n
Figure 1.T ransistor Noise Model
M18–2/4
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