LRC MMBT5087LT1 Datasheet
Low Noise T ransistor
LESHAN RADIO COMPANY, LTD.
PNP Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
DEVICE MARKING
MMBT5087LT=2Q
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation RF-5 Board (1) P
T A =25 °C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
– 50 Vdc
– 50 Vdc
– 3.0 Vdc
– 50 mAdc
D
θJA
D
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150
MMBT5087LT1
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
°C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min M ax Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage V
(I C = –100 µAdc, I E = 0)
Collector Cutoff Current I
(V
= –10 Vdc, I E= 0) — –10
CB
(V
= –35 Vdc, I E= 0) — –50
CB
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
(BR)CEO
(BR)CBO
CBO
– 50 — Vdc
– 50 — Vdc
n Adc
M17–1/6
LESHAN RADIO COMPANY, LTD.
MMBT5087LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = –100µAdc, V
(I C = –1.0 mAdc, V
(I C = –10 mAdc, V
= –5.0 Vdc) 250 800
CE
= –5.0 Vdc) 250 ––
CE
= –5.0 Vdc) 250 ––
CE
Collector–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
Base–Emitter Saturation Voltage
(I
= –10 mAdc, I B = –1.0 mAdc)
C
V
V
FE
CE(sat)
BE(sat)
–– – 0.3 V dc
–– – 0.85 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –500 µAdc, V CE= –5.0 Vdc, f = 20 MHz)
Output Capacitance
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain h
(I C= –1.0mAdc, V
= –5.0Vdc, f = 1.0 kHz)
CE
Noise Figure N F dB
(I C = –20 mAdc, V CE= –5.0 Vdc,Rs=10kΩ, f = 1.0 kHz) — 2.0
(I C = –100µAdc, V CE= –5.0 Vdc,Rs=3.0kΩ, f = 1.0 kHz) — 2.0
f
T
C
obo
fe
40 — MHz
— 4.0 pF
250 900 —
––
M17–2/6
Loading...