LRC MMBT4403LT1 Datasheet

General Purpose Transistors

PNP Silicon

LESHAN RADIO COMPANY, LTD.

3
COLLECTOR

1
BASE

2
EMITTER

MAXIMUM RA TINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

CEO

CBO

EBO

C

– 40 Vdc
– 40 Vdc

– 5.0 Vdc

– 600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR –5 Board (1) P

D

T A =25 °C

Derate above 25°C 1.8 mW/°C

Thermal Resistance Junction to Ambient R
T otal Device Dissipation P

θJA

D

Alumina Substrate (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T

θJA

stg

225 mW

556 °C/W
300 mW

417 °C/W

–55 to +150

MMBT4403LT1

3

1

2

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

°C

DEVICE MARKING

MMBT4403LT1 = 2T

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3) V
(I C = –1.0 mAdc, I B = 0) – 40 —
Collector–Base Breakdown Voltage V
(I C = –0.1mAdc, I E = 0) – 40 —
Emitter–Base Breakdown Voltage V
(I E = –0.1mAdc, I C = 0) – 5.0 —
Base Cutoff Current I
(V

= –35 Vdc, V

CE

= –0.4 Vdc) — – 0.1

EB

Collector Cutoff Current I
(V

= –35 Vdc, V

CE

= –0.4 Vdc) — – 0.1

EB

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse T est: Pulse Width <300 µs; Duty Cycle <2.0%.

(BR)CEO

(BR)CBO

(BR)EBO

BEV

CEX

Vdc

Vdc

Vdc

µAdc

µAdc

O15–1/5

LESHAN RADIO COMPANY, LTD.

MMBT4403LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain h
(I C = –0.1 mAdc, V
(I C = –1.0 mAdc, V
(I C = –10 mAdc, V
(I C = –150 mAdc, V
(I C = –500 mAdc, V

= –1.0 Vdc) 30 ––

CE

= –1.0 Vdc) 60 ––

CE

= –1.0 Vdc) 100 ––

CE

= –2.0 Vdc)(3) 100 300

CE

= –2.0 Vdc)(3) 20 ––

CE

Collector–Emitter Saturation Voltage(3) V
(I C = –150mAdc, I B = –15 mAdc) –– – 0.4
(I C = –500 mAdc, I B = –50 mAdc) –– – 0.75
Base–Emitter Saturation Voltage (3) V
(I C = –150 mAdc, I B = –15 mAdc) – 0.75 – 0.95
(I C = –500 mAdc, I B = –50 mAdc) –– – 1.3

FE

CE(sat)

BE(sat)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product f
(I C = –20mAdc, V CE= –10 Vdc, f = 100 MHz) 200 ––
Collector–Base Capacitance C
(V CB= –10 Vdc, I E = 0, f = 1.0 MHz) –– 8.5
Emitter–Base Capacitance C
(V

= –0.5 Vdc, I C = 0, f = 1.0 MHz) –– 30

BE

Input Impedance h
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 1.5 15
Voltage Feedback Ratio h
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 0.1 8.0
Small–Signal Current Gain h
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 60 500
Output Admittance h
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 1.0 100

T

cb

eb

ie

re

fe

oe

––

Vdc

Vdc

MHz

pF

pF

kΩ

X 10

—

µmhos

–4

SWITCHING CHARACTERISTICS

Delay Time (V
Rise Time I C = –150mAdc, I
Storage Time (V
Fall Time I

3. Pulse T est: Pulse W idth <300 µs; Duty Cycle <2.0%.

= – 30 Vdc, V

CC

= –30 Vdc, I C = –150 mAdc, t

CC

= I

= –15 mAdc) t

B1

B2

= –2.0 Vdc, t

EB

= –15 mAdc) t

B1

SWITCHING TIME EQUIVALENT TEST CIRCUITS

– 30 V

200

C S* < 10 pF

Scope rise time < 4.0ns
*T otal shunt capacitance of test jig connectors, and oscilloscope

0

–16 V

<2.0 ns+2.0V

1.0 to 100µs,
DUTY CYCLE = 2%

Figure 1. Turn–On Time

1.0 k

d

d

s

f

+ 14V

0

–16 V

—15
—20ns
— 225 ns
—30

– 30 V

< 20 ns

200

1.0 k

1N916

1.0 to 100µs,
DUTY CYCLE = 2%

+4.0 V

C S*< 10 pF

Figure 2. Turn–Off Time

O15–2/5