General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
40 Vdc
60 Vdc
6.0 Vdc
600 mAdc
D
θJA
D
θJA
–55 to +150 °C
stg
225 mW
556 °C/W
300 mW
417 °C/W
MMBT4401L T1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) V
(I C = 1.0 mAdc, I B = 0) 40 —
Collector–Base Breakdown Voltage V
(I C = 0.1 mAdc, I E = 0) 60 —
Emitter–Base Breakdown Voltage V
(I E = 0.1 mAdc, I C = 0) 6.0 —
Base Cutoff Current I
(V
= 35 Vdc, V
CE
= 0.4 Vdc) — 0.1
EB
Collector Cutoff Current I
(V
= 35 Vdc, V
CE
= 0.4 Vdc) — 0.1
EB
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse T est: Pulse W idth <300 µs; Duty Cycle <2.0%.
(BR)CEO
(BR)CBO
(BR)EBO
BEV
CEX
Vdc
Vdc
Vdc
µAdc
µAdc
O14–1/5
LESHAN RADIO COMPANY, LTD.
MMBT4401LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS ( 3 )
DC Current Gain h
(I C = 0.1 mAdc, V
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
(I C = 150 mAdc, V
(I C = 500 mAdc, V
= 1.0 Vdc) 20 ––
CE
= 1.0 Vdc) 40 ––
CE
= 1.0 Vdc) 80 ––
CE
= 1.0 Vdc) 100 300
CE
= 2.0 Vdc) 40 ––
CE
Collector–Emitter Saturation Voltage V
(I C = 150 mAdc, I B = 15 mAdc) –– 0.4
(I C = 500 mAdc, I B = 50 mAdc) –– 0.75
Base–Emitter Saturation Voltage V
(I C = 150 mAdc, I B = 15 mAdc) 0.75 0.95
(I C = 500 mAdc, I B = 50 mAdc) –– 1.2
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f
(I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz) 250 ––
Collector–Base Capacitance C
(V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) –– 6.5
Emitter–Base Capacitance C
(V
= 0.5 Vdc, I C = 0, f = 1.0 MHz) –– 30
EB
Input Impedance h
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 1.0 15
Voltage Feedback Ratio h
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 0.1 8.0
Small–Signal Current Gain h
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 40 500
Output Admittance h
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 1.0 30
T
cb
eb
ie
re
fe
oe
––
Vdc
Vdc
MHz
pF
pF
kΩ
X 10
—
µmhos
–4
SWITCHING CHARACTERISTICS
Delay Time (V
Rise Time I C = 150 mAdc, I
Storage Time (V
Fall Time I
3. Pulse T est: Pulse W idth <300 µs; Duty Cycle <2.0%.
= 30 Vdc, V
CC
= 30 Vdc, I C = 150 mAdc t
CC
= I
= 15 mAdc) t
B1
B2
= 2.0 Vdc t
EB
= 15 mAdc) t
B1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
200 Ω
1.0 kΩ
C S* < 10 pF
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+ 16 V
0
– 2.0V
1.0 to 100µs,
DUTY CYCLE = 2%
<2.0 ns
Figure 1. Turn–On Time
d
r
s
f
+ 16 V
0
–14 V
—15
—20ns
— 225 ns
—30
1.0 to 100µs,
DUTY CYCLE = 2%
+30 V
200Ω
1.0 kΩ
C S*< 10 pF
< 20 ns
1N916
– 4.0 V
Figure 2. Turn–Off Time
O14–2/5