LRC MMBT4401LT1 Datasheet

General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
3 COLLECTOR
1 BASE
2 EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R T otal Device Dissipation P Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R Junction and Storage T emperature TJ , T
40 Vdc 60 Vdc
6.0 Vdc
600 mAdc
D
θJA
D
θJA
–55 to +150 °C
stg
225 mW
556 °C/W
300 mW
417 °C/W
MMBT4401L T1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) V (I C = 1.0 mAdc, I B = 0) 40 — Collector–Base Breakdown Voltage V (I C = 0.1 mAdc, I E = 0) 60 — Emitter–Base Breakdown Voltage V (I E = 0.1 mAdc, I C = 0) 6.0 — Base Cutoff Current I (V
= 35 Vdc, V
CE
= 0.4 Vdc) 0.1
EB
Collector Cutoff Current I (V
= 35 Vdc, V
CE
= 0.4 Vdc) 0.1
EB
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse T est: Pulse W idth <300 µs; Duty Cycle <2.0%.
(BR)CEO
(BR)CBO
(BR)EBO
BEV
CEX
Vdc
Vdc
Vdc
µAdc
µAdc
O14–1/5
LESHAN RADIO COMPANY, LTD.
MMBT4401LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS ( 3 )
DC Current Gain h (I C = 0.1 mAdc, V (I C = 1.0 mAdc, V (I C = 10 mAdc, V (I C = 150 mAdc, V (I C = 500 mAdc, V
= 1.0 Vdc) 20 ––
CE
= 1.0 Vdc) 40 ––
CE
= 1.0 Vdc) 80 ––
CE
= 1.0 Vdc) 100 300
CE
= 2.0 Vdc) 40 ––
CE
Collector–Emitter Saturation Voltage V (I C = 150 mAdc, I B = 15 mAdc) –– 0.4 (I C = 500 mAdc, I B = 50 mAdc) –– 0.75 Base–Emitter Saturation Voltage V (I C = 150 mAdc, I B = 15 mAdc) 0.75 0.95 (I C = 500 mAdc, I B = 50 mAdc) –– 1.2
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f (I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz) 250 –– Collector–Base Capacitance C (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) –– 6.5 Emitter–Base Capacitance C (V
= 0.5 Vdc, I C = 0, f = 1.0 MHz) –– 30
EB
Input Impedance h (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 1.0 15 Voltage Feedback Ratio h (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 0.1 8.0 Small–Signal Current Gain h (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 40 500 Output Admittance h (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 1.0 30
T
cb
eb
ie
re
fe
oe
––
Vdc
Vdc
MHz
pF
pF
k
X 10
µmhos
–4
SWITCHING CHARACTERISTICS
Delay Time (V Rise Time I C = 150 mAdc, I Storage Time (V Fall Time I
3. Pulse T est: Pulse W idth <300 µs; Duty Cycle <2.0%.
= 30 Vdc, V
CC
= 30 Vdc, I C = 150 mAdc t
CC
= I
= 15 mAdc) t
B1
B2
= 2.0 Vdc t
EB
= 15 mAdc) t
B1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
200
1.0 k C S* < 10 pF
Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope
+ 16 V
0
– 2.0V
1.0 to 100µs, DUTY CYCLE = 2%
<2.0 ns
Figure 1. Turn–On Time
d
r
s
f
+ 16 V
0
–14 V
—15 —20ns — 225 ns —30
1.0 to 100µs, DUTY CYCLE = 2%
+30 V
200
1.0 k C S*< 10 pF
< 20 ns
1N916
– 4.0 V
Figure 2. Turn–Off Time
O14–2/5
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