LRC MMBT404ALT1 Datasheet
Chopper Transistor
LESHAN RADIO COMPANY, LTD.
PNP Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RA TINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
T otal Device Dissipation FR-5 Board,(1) P
T A =25 °C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
D
θJA
D
θJA
stg
– 35 Vdc
– 40 Vdc
– 25 Vdc
– 150 mAdc
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150
MMBT404ALT1
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
°C
DEVICE MARKING
MMBT404ALT1 = 2N
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –10 mAdc, I B = 0)
Collector– Emitter Breakdown Voltage
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Collector Cutoff Current
(V
= –10Vdc, I E = 0)
CE
Emitter Cutoff Current
(V EB= –10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
I
EBO
– 35 — — Vdc
– 40 — — Vdc
– 25 — — Vdc
— — –100 nAdc
— — –100 nAdc
O1–1/2
LESHAN RADIO COMPANY, LTD.
MMBT404ALT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = –12 mAdc, V
= – 0.15 Vdc)
CE
Collector–Emitter Saturation Voltage V
(I C = –12mAdc, I B = – 0.4 mAdc) –– –– – 0.15
(I C = – 24mAdc, I B = – 1.0 mAdc) –– –– – 0.20
Base–Emitter Saturation Voltage V
(I C = –12mAdc, I B = – 0.4 mAdc) –– –– – 0.85
(I C = –24mAdc, I B = – 1.0 mAdc) –– –– – 1.00
h
FE
CE(sat)
BE(sat)
100 –– 400 ––
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB= – 6.0 Vdc, I E = 0, f = 1.0 MHz)
C
obo
–– –– 20 pF
SWITCHING CHARACTERISTICS
Delay Time(V
Rise Time ( I
Storage Time (V
Fall Time (I
= –10Vdc, IC = –10 mVdc) (Figure 1) t
CC
= –1.0 mAdc, I
B1
= –10 Vdc, I C = –10 mAdc) t
CC
= I
= –1.0 mAdc)(Figure 1) t
B1
B2
= –14Vdc) t
BE(off)
d
r
s
f
—43—ns
— 180 — ns
— 675 — ns
— 160 — ns
Vdc
Vdc
V
BB
R
BB
1.0 k
0.1 µF
V
in
R
B
V
1.0 k
10 k
51
V
V
in
BB
(Volts) (Volts)
t
, t d , t
on
t
, t s and t f+20.6 –11.6
off
r
–12 +1.4
Voltages and resistor values shown are
for I C = 10 mA, I C /I B = 10 and I
= I
B1
Figure 1. Switching Time Test Circuit
= –10 V
CC
TO SCOPE
B2
O1–2/2
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