LRC MMBT3904WT1, MMBT3906WT1 Datasheet

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN and PNP Silicon

These transistors are designed for general purpose amplifier applications. They are housed

in the SOT–323/SC–70 which is designed for low power surface mount applications.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage MMBT3904WT1 V

MMBT3906WT1 – 40

Collector–Base Voltage MMBT3904WT1 V

MMBT3906WT1 – 40

Emitter–Base Voltage MMBT3904WT1 V

MMBT3906WT1 – 5.0

C

ollector Current — Continuous

MMBT3904WT1 I
MMBT3906WT1 – 200

CEO

CBO

EBO

C

40 Vdc

60 Vdc

6.0 Vdc

200 mAdc

NPN

MMBT3904WT1

PNP

MMBT3906WT1

GENERAL PURPOSE

AMPLIFIER TRANSISTORS

SURFACE MOUNT

3

1

2

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

T otal Device Dissipation (1) P

D

150 mW
T A =25 °C
Thermal Resistance, Junction to Ambient R

θJA

Junction and Storage T emperature T J , T

stg

833 °C/W

–55 to +150

°C

DEVICE MARKING

MMBT3904WT1 = AM; MMBT3906WT1 = 2A

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (2)
(I C = 1.0 mAdc, I B = 0) MMBT3904WT1 V

(BR)CEO

(I C = –1.0 mAdc, I B = 0) MMBT3906WT1 – 40 —
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0) MMBT3904WT1 V

(BR)CBO

(I C = –10 µAdc, I E = 0) MMBT3906WT1 – 40 —
Emitter–Base Breakdown Voltage

(IE= 10 µAdc, I C = 0) MMBT3904WT1 V

BR)EBO

(

(I E = –10 µAdc, I C = 0) MMBT3906WT1 – 5.0 —
Base Cutoff Current
(V

= 30 Vdc, V

CE

(V

= –30 Vdc, V

CE

= 3.0 Vdc) MMBT3904WT1 I

EB

= –3.0 Vdc) MMBT3906WT1 — -50

EB

BL

Collector Cutoff Current
(V

= 30 Vdc, V

CE

(V

= –30 Vdc, V

CE

= 3.0 Vdc) MMBT3904WT1 I

EB

= –3.0 Vdc) MMBT3906WT1 — – 50

EB

CEX

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.

2. Pulse T est: Pulse W idth <300 µs; Duty Cycle <2.0%.

40 — Vdc

60 — Vdc

6.0 — Vdc

— 50 nAdc

— 50 nAdc

CASE 419–02, STYLE 3

SOT– 323 / SC–70

K3–1/9

LESHAN RADIO COMPANY, LTD.

NPN MMBT3904WT1 PNP MMBT3906WT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS (2)

DC Current Gain h

(I C = 0.1 mAdc, V
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
(I C = 50 mAdc, V
(I C = 100 mAdc, V
(I C = –0.1 mAdc, V
(I C = –1.0 mAdc, V
(I C = –10 mAdc, V
(I C = –50 mAdc, V
(I C = –100 mAdc, V

= 1.0 Vdc) MMBT3904WT1 40 ––

CE

= 1.0 Vdc) 70 ––

CE

= 1.0 Vdc) 100 300

CE

= 1.0 Vdc) 60 ––

CE

= 1.0 Vdc) 30 ––

CE

= –1.0 Vdc) MMBT3906WT1 60 ––

CE

= –1.0 Vdc) 80 ––

CE

= –1.0 Vdc) 100 300

CE

= –1.0 Vdc) 60 ––

CE

= –1.0 Vdc) 30 ––

CE

Collector–Emitter Saturation Voltage V

(I C = 10 mAdc, I B = 1.0 mAdc) MMBT3904WT1 –– 0.2
(I C = 50 mAdc, I B = 5.0 mAdc) –– 0.3
(I C = –10 mAdc, I B = –1.0 mAdc) MMBT3906WT1 –– – 0.25
(I C = –50 mAdc, I B = –5.0 mAdc) –– – 0.4

Base–Emitter Saturation Voltage V

(I C = 10 mAdc, I B = 1.0 mAdc) MMBT3904WT1 0.65 0.85
(I C = 50 mAdc, I B = 5.0 mAdc) –– 0.95
(I C = –10 mAdc, I B = –1.0 mAdc) MMBT3906WT1 – 0.65 – 0.85
(I C = –50 mAdc, I B = –5.0 mAdc) –– – 0.95

FE

CE(sat)

BE(sat)

––

Vdc

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product f

(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz) MMBT3904WT1 300 ––
(I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz) MMBT3906WT1 250 ––

Output Capacitance C

(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MMBT3904WT1 –– 4.0
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz) MMBT3906WT1 –– 4.5

Input Capacitance C

(V

= 0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT3904WT1 –– 8.0

EB

(V

= –0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT3906WT1 –– 10.0

EB

Input Impedance h

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 1.0 10
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 2.0 12

Voltage Feedback Ratio h

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 0.5 8.0
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 0.1 10

Small–Signal Current Gain h

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 100 400
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 100 400

Output Admittance h

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 1.0 40
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 3.0 60

Noise Figure NF dB

(V CE= 5.0Vdc, I C = 100µAdc, R S=1.0 kΩ, f =1.0kHz)
(V CE= –5.0Vdc, I C = –100 µAdc, R S=1.0 kΩ, f =1.0kHz)

MMBT3904WT1 –– 5.0
MMBT3906WT1 –– 4.0

T

obo

ibo

ie

re

fe

oe

MHz

pF

pF

kΩ

X 10

—

µmhos

–4

K3–2/9

SWITCHING CHARACTERISTICS

Delay Time (V

Rise Time (I C = 10 mAdc, I

Storage Time (V

Fall Time (I

2. Pulse T est: Pulse Width <300 µs; Duty Cycle <2.0%.

= 3.0 Vdc, V

CC

(V

= –3.0 Vdc, V

CC

(I C = –10 mAdc, I

= 3.0 Vdc, I C = 10 mAdc) MMBT3904WT1 t

CC

(V

= –3.0 Vdc, I C = –10 mAdc) MMBT3906WT1 — 225 ns

CC

= I

= 1.0 mAdc) MMBT3904WT1 t

B1

B2

(I

= I

= –1.0 mAdc) MMBT3906WT1 — 75 ns

B1

B2

= –0.5 Vdc) MMBT3904WT1 t

BE

= 0.5 Vdc) MMBT3906WT1 — 35 ns

BE

= 1.0 mAdc) MMBT3904WT1 t

B1

= –1.0 mAdc) MMBT3906WT1 — 35 ns

B1

MMBT3904WT1

LESHAN RADIO COMPANY, LTD.

NPN MMBT3904WT1 PNP MMBT3906WT1

d

r

s

f

—35

—35

— 200

—50

300 ns

DUTY CYCLE = 2%

– 0.5 V

10

7.0

5.0

3.0

2.0

CAPACITANCE (pF)

1.0

+10.9 V

10 k

+3 V

<1 ns

*Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

MMBT3904WT1

C

ibo

C

obo

275

C S < 4.0 pF*

10 < t

< 500 µs

DUTY CYCLE = 2%

1

0

– 9.1 V

5000

V

3000

I C / I B = 10

2000

1000

700
500

300
200

Q, CHARGE (pC)

100

70
50

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 2000.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40

t

1

+10.9 V

+3 V

10 k

1N916

<1.0 ns

Figure 2. Storage and Fall Time

Equivalent T est Circuit

= 40 V

CC

Q

T

275

C S < 4.0 pF*

T J = 25°C
T J = 125°C

MMBT3904WT1

Q

A

REVERSE BIAS VOLTAGE (VOLTS)

Figure 3. Capacitance

I C , COLLECTOR CURRENT (mA)

Figure 4. Charge Data

K3–3/9