LRC MMBT3906LT1 Datasheet

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

3
COLLECTOR

1
BASE

2
EMITTER

MAXIMUM RA TINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

CEO

CBO

EBO

C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

T otal Device Dissipation FR– 5 Board(1) P
T A =25 °C

Derate above 25°C 1.8 mW/°C

Thermal Resistance Junction to Ambient R
T otal Device Dissipation P

Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance Junction to Ambient R
Junction and Storage T emperature T J , T

D

θJA

D

θJA

stg

– 40 Vdc

– 40 Vdc

– 5.0 Vdc

– 200 mAdc

225 mW

556 °C/W
300 mW

417 °C/W

–55 to +150

MMBT3906LT1

3

1

2

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

°C

DEVICE MARKING

MMBT3906LT1 = 2A

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3) V
(I C = –1.0 mAdc, I B = 0) – 40 —
Collector–Base Breakdown Voltage V
(I C = –10 µAdc, I E = 0) – 40 —
Emitter–Base Breakdown Voltage V
(I E = –10 µAdc, I C = 0) – 5.0 —
Base Cutoff Current I
(V

= –30 Vdc, V

CE

= –3.0 Vdc) — – 50

EB

Collector Cutoff Current I
(V

= –30 Vdc, V

CE

= –3.0 Vdc) — – 50

EB

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Width <300 µs; Duty Cycle <2.0%.

(BR)CEO

(BR)CBO

(BR)EBO

BL

CEX

Vdc

Vdc

Vdc

nAdc

nAdc

O12–1/5

LESHAN RADIO COMPANY, LTD.

MMBT3906LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS (2)

DC Current Gain h
(I C = –0.1 mAdc, V
(I C = –1.0 mAdc, V
(I C = –10 mAdc, V
(I C = –50 mAdc, V
(I C = –100 mAdc, V

= –1.0 Vdc) 60 ––

CE

= –1.0 Vdc) 80 ––

CE

= –1.0 Vdc) 100 300

CE

= –1.0 Vdc) 60 ––

CE

= –1.0 Vdc) 30 ––

CE

Collector–Emitter Saturation Voltage V
(I C = –10 mAdc, I B = –1.0 mAdc) –– – 0.25
(I C = –50 mAdc, I B = –5.0 mAdc) –– – 0.4
Base–Emitter Saturation Voltage V
(I C = –10 mAdc, I B = –1.0 mAdc) – 0.65 – 0.85
(I C = –50 mAdc, I B = –5.0 mAdc) –– – 0.95

FE

CE(sat)

BE(sat)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product f
(I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz) 250 ––
Output Capacitance C
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz) –– 4.5
Input Capacitance C
(V

= –0.5 Vdc, I C = 0, f = 1.0 MHz) –– 10

EB

Input Impedance h
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 2.0 12
Voltage Feedback Ratio h
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 0.1 10
Small–Signal Current Gain h
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 100 400
Output Admittance * h
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 3.0 60
Noise Figure NF dB
(V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz)

T

obo

ibo

ie

re

fe

oe

–– 4.0

––

Vdc

Vdc

X 10

µmhos

MHz

pF

pF

kΩ

–4

—

SWITCHING CHARACTERISTICS

Delay Time (V
Rise Time I C = –10 mAdc, I
Storage Time (V
Fall Time I

3. Pulse T est: Pulse Width <300 µs; Duty Cycle <2.0%.

= – 3.0 Vdc, V

CC

= –3.0 Vdc, I C = –10 mAdc, t

CC

= I

= –1.0 mAdc) t

B1

B2

= 0.5 Vdc, t

BE

= –1.0 mAdc) t

B1

d

d

s

f

—35
—35ns
— 225 ns
—75

O12–2/5