These transistors are designed for general purpose amplifier applications. They are housed
in the SOT–323/SC–70 which is designed for low power surface mount applications.
MAXIMUM RATINGS
RatingSymbolValueUnit
Collector–Emitter VoltageMMBT3904WT1V
MMBT3906WT1– 40
Collector–Base VoltageMMBT3904WT1V
MMBT3906WT1 – 40
Emitter–Base VoltageMMBT3904WT1V
MMBT3906WT1– 5.0
C
ollector Current — Continuous
MMBT3904WT1I
MMBT3906WT1– 200
CEO
CBO
EBO
C
40Vdc
60 Vdc
6.0Vdc
200mAdc
NPN
MMBT3904WT1
PNP
MMBT3906WT1
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
3
1
2
THERMAL CHARACTERISTICS
CharacteristicSymbolMaxUnit
T otal Device Dissipation (1)P
D
150mW
T A =25 °C
Thermal Resistance, Junction to AmbientR
θJA
Junction and Storage T emperature T J , T
stg
833°C/W
–55 to +150
°C
DEVICE MARKING
MMBT3904WT1 = AM; MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic SymbolMin Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I C = 1.0 mAdc, I B = 0)MMBT3904WT1V
(BR)CEO
(I C = –1.0 mAdc, I B = 0)MMBT3906WT1– 40—
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)MMBT3904WT1V
(BR)CBO
(I C = –10 µAdc, I E = 0)MMBT3906WT1– 40—
Emitter–Base Breakdown Voltage
(IE= 10 µAdc, I C = 0)MMBT3904WT1V
BR)EBO
(
(I E = –10 µAdc, I C = 0)MMBT3906WT1– 5.0—
Base Cutoff Current
(V
= 30 Vdc, V
CE
(V
= –30 Vdc, V
CE
= 3.0 Vdc)MMBT3904WT1I
EB
= –3.0 Vdc)MMBT3906WT1—-50
EB
BL
Collector Cutoff Current
(V
= 30 Vdc, V
CE
(V
= –30 Vdc, V
CE
= 3.0 Vdc)MMBT3904WT1I
EB
= –3.0 Vdc)MMBT3906WT1—– 50
EB
CEX
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse T est: Pulse W idth <300 µs; Duty Cycle <2.0%.
40—Vdc
60—Vdc
6.0—Vdc
—50nAdc
—50nAdc
CASE 419–02, STYLE 3
SOT– 323 / SC–70
K3–1/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1PNP MMBT3906WT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic SymbolMinMax Unit
ON CHARACTERISTICS (2)
DC Current Gainh
(I C = 0.1 mAdc, V
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
(I C = 50 mAdc, V
(I C = 100 mAdc, V
(I C = –0.1 mAdc, V
(I C = –1.0 mAdc, V
(I C = –10 mAdc, V
(I C = –50 mAdc, V
(I C = –100 mAdc, V
= 1.0 Vdc)MMBT3904WT140––
CE
= 1.0 Vdc)70––
CE
= 1.0 Vdc)100300
CE
= 1.0 Vdc)60––
CE
= 1.0 Vdc)30––
CE
= –1.0 Vdc)MMBT3906WT160––
CE
= –1.0 Vdc)80––
CE
= –1.0 Vdc)100300
CE
= –1.0 Vdc)60––
CE
= –1.0 Vdc)30––
CE
Collector–Emitter Saturation VoltageV
(I C = 10 mAdc, I B = 1.0 mAdc)MMBT3904WT1––0.2
(I C = 50 mAdc, I B = 5.0 mAdc)––0.3
(I C = –10 mAdc, I B = –1.0 mAdc)MMBT3906WT1––– 0.25
(I C = –50 mAdc, I B = –5.0 mAdc)––– 0.4
Base–Emitter Saturation VoltageV
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT3904WT10.650.85
(I C = 50 mAdc, I B = 5.0 mAdc)––0.95
(I C = –10 mAdc, I B = –1.0 mAdc) MMBT3906WT1– 0.65– 0.85
(I C = –50 mAdc, I B = –5.0 mAdc)––– 0.95
FE
CE(sat)
BE(sat)
––
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Productf
(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz) MMBT3904WT1300––
(I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz)MMBT3906WT1250––
Output CapacitanceC
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MMBT3904WT1––4.0
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)MMBT3906WT1––4.5
Input CapacitanceC
(V
= 0.5 Vdc, I C = 0, f = 1.0 MHz)MMBT3904WT1––8.0
EB
(V
= –0.5 Vdc, I C = 0, f = 1.0 MHz)MMBT3906WT1––10.0
EB
Input Impedanceh
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT11.010
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT12.012
Voltage Feedback Ratioh
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)MMBT3904WT10.58.0
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)MMBT3906WT10.110
Small–Signal Current Gainh
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)MMBT3904WT1100400
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)MMBT3906WT1100400
Output Admittance h
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)MMBT3904WT11.040
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)MMBT3906WT13.060
Noise FigureNFdB
(V CE= 5.0Vdc, I C = 100µAdc, R S=1.0 kΩ, f =1.0kHz)
(V CE= –5.0Vdc, I C = –100 µAdc, R S=1.0 kΩ, f =1.0kHz)
MMBT3904WT1––5.0
MMBT3906WT1––4.0
T
obo
ibo
ie
re
fe
oe
MHz
pF
pF
kΩ
X 10
—
µmhos
–4
K3–2/9
SWITCHING CHARACTERISTICS
Delay Time (V
Rise Time (I C = 10 mAdc, I
Storage Time (V
Fall Time (I
2. Pulse T est: Pulse Width <300 µs; Duty Cycle <2.0%.
= 3.0 Vdc, V
CC
(V
= –3.0 Vdc, V
CC
(I C = –10 mAdc, I
= 3.0 Vdc, I C = 10 mAdc)MMBT3904WT1t
CC
(V
= –3.0 Vdc, I C = –10 mAdc)MMBT3906WT1—225ns
CC
= I
= 1.0 mAdc)MMBT3904WT1t
B1
B2
(I
= I
= –1.0 mAdc)MMBT3906WT1—75ns
B1
B2
= –0.5 Vdc)MMBT3904WT1 t
BE
= 0.5 Vdc)MMBT3906WT1—35ns
BE
= 1.0 mAdc)MMBT3904WT1t
B1
= –1.0 mAdc)MMBT3906WT1—35ns
B1
MMBT3904WT1
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1PNP MMBT3906WT1
d
r
s
f
—35
—35
—200
—50
300 ns
DUTY CYCLE = 2%
– 0.5 V
10
7.0
5.0
3.0
2.0
CAPACITANCE (pF)
1.0
+10.9 V
10 k
+3 V
<1 ns
*Total shunt capacitance of test jig and connectors