LRC MMBT3904LT1 Datasheet
General Purpose Transistor
NPN Silicon
LESHAN RADIO COMPANY, LTD.
3
COLLECTOR
1
BASE
2
MAXIMUM RATINGS
EMITTER
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBT3904LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(I C = 1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage V
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage V
(I E = 10 µAdc, I C = 0)
Base Cutoff Current I
( V CE= 30 Vdc, V EB = 3.0 Vdc, )
Collector Cutoff Current I
( V CE = 30Vdc, I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse T est: Pulse Width <300 µs, Duty Cycle <2.0%.
= 3.0Vdc )
EB
(BR)CEO
(BR)CBO
(BR)EBO
BL
CEX
40 — Vdc
60 — Vdc
6.0 — Vdc
— 50 nAdc
— 50 nAdc
O11–1/6
LESHAN RADIO COMPANY, LTD.
MMBT3904LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (3)
DC Current Gain(1) h
(I C =0.1 mAdc, V
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
(I C = 50mAdc, V
(I C = 100mAdc, V
=1.0 Vdc) 40 ––
CE
= 1.0 Vdc) 70 ––
CE
= 1.0 Vdc) 100 300
CE
= 1.0Vdc) 60 ––
CE
=1.0 Vdc) 30 ––
CE
Collector–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 1.0 mAdc)(3) –– 0.2
(I C = 50 mAdc, I B = 5.0mAdc) –– 0.3
Base–Emitter Saturation Voltage(3) V
(I C = 10 mAdc, I B = 1.0mAdc) 0.65 0.85
(I C = 50mAdc, I B = 5.0mAdc ) –– 0.95
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance
(V CB = 5.0Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V
= 0.5Vdc, I C = 0, f = 1.0 MHz)
EB
Input Impedancen
(V
= 10Vdc, I C = 1.0mAdc, f = 1.0 kHz)
CE
Voltage Feedback Ratio
(V
= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
CE
Small–Signal Current Gain
(V
= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
CE
Output Admittance
(V
= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
CE
Noise Figure
(V
= 5.0 Vdc, I C = 100µAdc, R S = 1.0 k Ω, f = 1.0 kHz)
CE
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
300 –– MHz
–– 4.0 pF
–– 8.0 pF
1.0 10 pF
0.5 8.0 X10
100 400 —
1.0 40 θmhos
NF — 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time (V
Rise Time I C = 10 mAdc, I
Storage Time (V
Fall Time I C = 10 mAdc,I
= 3.0 Vdc,V
CC
= 3.0Vdc, t
CC
= –0.5Vdc t
BE
= 1.0mAdc) t
B1
= I
= 10 mAdc) t
B1
B2
d
r
s
f
—35
—35
— 200
—50
––
Vdc
Vdc
–4
ns
ns
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
O11–2/6
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