LRC MMBT3640LT1 Datasheet

LESHAN RADIO COMPANY, LTD.

Switching Transistor

PNP Silicon

3
COLLECTOR

1
BASE

2
EMITTER

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

CEO

CBO

EBO

C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board, (1) P
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T

–12 Vdc
–12 Vdc

–4.0 Vdc

–80 mAdc

D

θJA

D

θJA

stg

225 mW

556 °C/W

300 mW

417 °C/W

–55 to +150 °C

MMBT3640LT1

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

DEVICE MARKING

MMBT3640LT1 = 2J

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, V

Collector–Emitter Sustaining Voltage(1 )
(I C = –10 mAdc, I B = 0)

Collector–Base Breakdown Voltage
(I C = –100 µAdc, I E = 0)

Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current I
( V

= –6.0Vdc, V

CE

( V CE = –6.0Vdc, V
Base Current Current ( V CE = –6.0Vdc, V

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

= 0)

BE

= 0) — –0.01

BE

= 0, T A= 65°C) — –1.0

BE

= 0 ) I

EB

V

V

V

V

(BR)CES

CEO(sus)

(BR)CBO

(BR)EBO

CES

B

–12 ––

Vdc

–12 — Vdc

–12 –– Vdc

–4.0 — Vdc

µAdc

— –10 nAdc

O10–1/3

LESHAN RADIO COMPANY, LTD.

MMBT3640LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain h
(I C = –10mAdc, V
(I C = –50mAdc, V

= –0.3 Vdc) 30 120

CE

= –1.0 Vdc) 20 ––

CE

Collector–Emitter Saturation Voltage V
(I C = –10mAdc, I B = –1.0 mAdc) –– –0.2
(I C = –50 mAdc, I B = –5.0 mAdc) –– –0.6
(I C = –10 mAdc, I B = –1.0 mAdc, T A=65°C ) –– –0.25
Base–Emitter Saturation Voltage V
(I C = –10mAdc, I B = –0.5 mAdc) –0.75 –0.95
(I C = –10mAdc, I B = –1.0 mAdc) –0.8 –1.0
(I C = –50mAdc, I B = –5.0 mAdc) –– –1.5

FE

CE(sat)

BE(sat)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product(3),(4)
(I C = –10mAdc, V CE= –5.0Vdc, f = 100MHz)
Output Capacitance
(V CB = –5.0Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance

(V

= –0.5Vdc, I C = 0, f = 1.0 MHz)

EB

f

T

C

obo

C

ibo

500 –– MHz

–– 3.5 p F

–– 3.5 p F

SWITCHING CHARACTERISTICS

Delay Time (V
Rise Time I C = –50 mAdc, I
Storage Time (V
Fall Time I C = –50 mAdc,I
Turn–On Time t
(V

= –6.0 Vdc, I C = –50 mAdc, V

CC

(V

= –1.5 Vdc, I C = –10 mAdc, I

CC

Turn–Off T ime t
(V

= –6.0 Vdc, I C = –50 mAdc, V

CC

(V

= –1.5 Vdc, I C = –10 mAdc, I

CC

= –6.0 Vdc,V

CC

= –6.0 Vdc, t

CC

EB(off)

= –5.0 mAdc)

B1

EB(off)

= I

B1

=–1.9Vdc, t

EB(off)

= –5.0 mAdc) t

B1

= I

= –5.0 mAdc) t

B1

B2

=–1.9Vdc,I

=–1.9Vdc, I

= –0.5 mAdc)

B2

= –5.0 mAdc)

B1

= I

= –5.0 mAdc)

B1

B2

d

r

s

f

on

—10ns
—30ns
—20ns
—12ns

—
—

off

—
—

––

Vdc

Vdc

ns
25
60

ns
35
75

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

V

= –6.0 V

1.0 k

680

CC

110

V

out

TO SAMPLING SCOPE
INPUT Z > 100 k
RISE TIME < 1.0 ns

0

–6.8 V

PULSE SOURCE
RISE TIME < 1.0 ns
PULSE WIDTH >100 ns
Z in = 50 OHMS
FALL TIME < 1.0 ns

V

= +1.9 V

BB

0.1 µF

V

in

51

NOTES: Collector Current = 50 mA,

NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 5.0 mA.

Figure 1.

5.0 V

0

PULSE SOURCE
RISE TIME < 1.0 ns
PULSE WIDTH > 200 ns
Z in = 50 OHMS
FALL TIME < 1.0 ns

V BB = –6.0 V

0.1 mF

V

in

51

NOTES: Collector Current = 10 mA,

NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 0.5 mA.

Figure 2.

V CC = 1.5 V

5.0 k

5.0 k

130

V out

TO SAMPLING SCOPE
INPUT Z >100 k
RISE TIME < 1.0 ns

O10–2/3