LRC MMBT2907LT1, MMBT2907ALT1 Datasheet
General Purpose Transistor
PNP Silicon
3
COLLECTOR
LESHAN RADIO COMPANY, LTD.
MMBT2907LT1
1
BASE
2
MAXIMUM RATINGS
EMITTER
Value
Rating Symbol 2907 2907A Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
–40 –60 Vdc
–60 Vdc
–5.0 Vdc
–600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBT2907ALT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT2907LT1 = M2B, MMBT2907ALT1 = 2F
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(I C = –10 mAdc, I B = 0) MMBT2907 –40 —
MMBT2907A –60 —
Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0) V
Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0) V
Collector Cutoff Current( V CB = –30Vdc, I
= –0.5Vdc) I
BE(OFF)
Collector Cutoff Current I
( V CB = –50Vdc, I E = 0) MMBT2907 — –0.020
MMBT2907A — –0.010
( V CB = –50Vdc, I E = 0, T A =125°C ) MMBT2907 — –20
MMBT2907A — –10
Base Current( V CE = –30Vdc, V
= –0.5Vdc ) I
EB(off)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
(BR)CEO
(BR)CBO
(BR)EBO
CEX
CBO
B
–60 — Vdc
–5.0 — Vdc
— –50 nAdc
— –50 nAdc
Vdc
µAdc
O8–1/4
LESHAN RADIO COMPANY, LTD.
MMBT2907LT1 MMBT2907ALT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = –0.1mAdc, V
= –10 Vdc) MMBT2907 35 ––
CE
MMBT2907A 75 ––
(I C =–1.0mAdc, V
= –10 Vdc) MMBT2907 50 ––
CE
MMBT2907A 100 ––
(I C = –10 mAdc, V
= –10Vdc) MMBT2907 75 ––
CE
MMBT2907A 100 ––
(I C = –150mAdc, V
=–10 Vdc)(3) MMBT2907 –– ––
CE
MMBT2907A 100 300
(I C = –500mAdc, V
=–10 Vdc)(3) MMBT2907 30 ––
CE
MMBT2907A 50 ––
Collector–Emitter Saturation Voltage(3) V
(I C = –150mAdc, I B = –15 mAdc) –– –0.4
(I C = –500 mAdc, I B = –50 mAdc) –– –1.6
Base–Emitter Saturation Voltage(3) V
(I C = –150mAdc, I B = –15 mAdc) –– –1.3
(I C = –500mAdc, I B = –50 mAdc) –– –2.6
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –50mAdc, V CE= –20Vdc, f = 100MHz)
Output Capacitance
(V CB = –10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V
= –2.0Vdc, I C = 0, f = 1.0 MHz)
EB
f
T
C
obo
C
ibo
200 –– MHz
–– 8.0 p F
–– 30 pF
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
Rise Time t
Fall Time
Storage Time
Turn–Off T ime t
(V
= –30 Vdc,
CC
I C = –150 mAdc, I
(V
= –6.0 Vdc,
CC
I C = –150 mAdc,I
= –15 mAdc)
B1
= I
= 15 mAdc)
B1
B2
t
on
d
t
r
t
f
t
s
off
—45
—10ns
—40
—30
—80ns
— 100
––
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
INPUT
Z o = 50 Ω
PRF = 150 PPS
<
<
200 ns
200 ns
2.0 ns
RISE TIME
P.W.
0
–16 V
Figure 1. Delay and Rise Time Test Circuit
1.0 k
50
–30 V
200
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
INPUT
Z O= 50 Ω
PRF = 150 PPS
RISE TIME <2.0 ns
P.W.
<
200 ns
0
–30 V
200 ns
Figure 2. Storage and Fall Time Test Circuit
+15 V
1.0 k
1.0 k
50
1N916
–6.0 V
37
TO OSCILLOSCOPE
RISE TIME
<
5.0 ns
O8–2/4
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