LRC MMBT2907AWT1 Datasheet
Preliminary Information
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose
mplifier applications. They are housed in the SOT–323/
SC–70 package which is designed for low power surface
mount applications.
MAXIMUM RA TINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
1
BASE
– 60 Vdc
– 60 Vdc
– 5.0 Vdc
– 600 mAdc
3
COLLECTOR
2
EMITTER
LESHAN RADIO COMPANY, LTD.
MMBT2907A WT1
3
1
2
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
TA = 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
DEVICE MARKING
MMBT2907AWT1 = 2F
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2) V
(I C = – 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = – 10 mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10µAdc, I C = 0)
Base Cutoff Current
( V CE = –30Vdc, V
Collector Cutoff Current
( V CE = –30Vdc, V
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
EB(OFF)
EB(OFF)
= –0.5Vdc )
= –0.5Vdc )
V
V
D
θJA
stg
(BR)CEO
(BR)CBO
(BR)EBO
I
BL
I
CEX
150 mW
833 °C/W
–55 to +150 °C
–60 — Vdc
–60 — Vdc
–5.0 — Vdc
— – 50 nAdc
— – 50 nAdc
K2–1/2
LESHAN RADIO COMPANY, LTD.
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1) h
(I C =–0.1 mAdc, V
(I C = –1.0 mAdc, V
(I C = –10 mAdc, V
(I C = –150mAdc, V
(I C = –500mAdc, V
=–10 Vdc) 75 ––
CE
= –10 Vdc) 100 ––
CE
= –10 Vdc) 100 ––
CE
= –10Vdc) 100 ––
CE
=–10 Vdc) 50 ––
CE
Collector–Emitter Saturation Voltage(1) V
(I C = –150 mAdc, I B = –15 mAdc) –– –0.4
(I C = –500 mAdc, I B = –50 mAdc) –– –1.6
Base–Emitter Saturation Voltage(1) V
(I C = –150 mAdc, I B = –15mAdc) –– –1.3
(I C = –500mAdc, I B = –50mAdc ) –– –2.6
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
(I C = –50mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance
(V CB = –10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V
= –2.0Vdc, I C = 0, f = 1.0 MHz)
EB
SWITCHING CHARACTERISTICS
Turn–On Time (V
Delay Time I C = –150 mAdc, I
Rise Time t
Storage Time (V
Fall Time I C = –150 mAdc,I
Turn–Off T ime t
1. Pulse T est: Pulse Width <300 µs, Duty Cycle <2.0%.
= –30 Vdc, t
CC
= –15 mAdc) t
B1
= –6.0 Vdc, t
CC
= I
= 15 mAdc) t
B1
B2
CE(sat)
BE(sat)
f
C
C
FE
T
obo
ibo
on
d
r
s
f
off
200 –– MHz
–– 8.0 pF
–– 30 pF
—45
—10ns
—40
—80
—30ns
— 100
––
Vdc
Vdc
K2–2/2
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