LRC MMBT2484LT1 Datasheet
Low Noise Transistor
NPN Silicon
LESHAN RADIO COMPANY, LTD.
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
60 Vdc
60 Vdc
6.0 Vdc
50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBT2484LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT2484LT1 = 1U
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol M in Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V
(BR)CEO
(I C = 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage V
(BR)CBO
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage V
(BR)EBO
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current( V CB = 45Vdc, I E = 0) I
CBO
( V CB = 45Vdc, I E = 0, T A=150 °C) — 10 µAdc
Emitter Cutoff Current I
EBO
( V EB =5.0 Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
60 — Vdc
60 — Vdc
5.0 — Vdc
— 10 nAdc
— 10 nAdc
O7–1/4
LESHAN RADIO COMPANY, LTD.
MMBT2484LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
= 5.0 Vdc) 250 ––
CE
= 5.0Vdc) –– 8 0 0
CE
Collector–Emitter Saturation Voltage V
(I C = 1.0 mAdc, I B = 1.0 mAdc) –– 0.35
Base–Emitter On Voltage V
(I C = 1.0 mAdc, I
= 5.0 mAdc) –– 0.95
CE
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz)
Noise Finure NF –– 3.0 dB
(V CE=5.0 Vdc, I C = 10 µAdc , R S =10 kΩ, f = 1.0 MHz, BW =200 Hz)
= 25°C unless otherwise noted) (Continued)
A
FE
CE(sat)
BE(on)
C
obo
C
ibo
R
S
i
n
–– 6.0 pF
–– 6.0 pF
––
Vdc
Vdc
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
O7–2/4
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