LRC MMBT2369LT1, MMBT2369ALT1 Datasheet
Switching Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
1
BASE
MAXIMUM RATINGS
3
COLLECTOR
2
EMITTER
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CES
CBO
EBO
C
15 Vdc
40 Vdc
40 Vdc
4.5 Vdc
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBT2369LT1
MMBT2369ALT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBT2369LT1 = M1J, MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = 10 µAdc, V
= 0)
BE
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current( V CB = 20Vdc, I E = 0) I
( V CB = 20Vdc, I E = 0, T A=150 °C) — — 30
Collector Cutoff Current
( V CE = 20Vdc, V
= 0) MMBT2369A
BE
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
V
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CBO
I
CES
15 — — Vdc
40 — — Vdc
40 — — Vdc
4.5 — — Vdc
— — 0.4 µAdc
— — 0.4 µAdc
O6–1/5
LESHAN RADIO COMPANY, LTD.
MMBT2369LT1 MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Ty p Max Unit
ON CHARACTERISTICS
DC Current Gain(3) h
(I C = 10 mAdc, V
(I C = 10 mAdc, V
(I C = 10 mAdc, V
(I C = 10 mAdc, V
(I C = 30 mAdc, V
(I C = 100mAdc, V
(I C = 100mAdc, V
= 1.0 Vdc) MMBT2369 40 –– 120
CE
= 1.0 Vdc) MMBT2369A –– –– 120
CE
= 0.35 Vdc) MMBT2369A 40 –– ––
CE
= 0.35 Vdc,T A= –55°C )
CE
= 0.4Vdc) MMBT2369A 30 –– ––
CE
= 2.0 Vdc) MMBT2369 20 –– ––
CE
= 1.0 Vdc) MMBT2369A 20 –– ––
CE
MMBT2369A 20 –– ––
Collector–Emitter Saturation Voltage(3) V
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT2369 –– –– 0.25
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT2369A –– –– 0.20
(I C = 10 mAdc, I B = 1.0 mAdc,
T A= + 125°C
) MMBT2369A –– –– 0.30
(I C = 30mAdc, I B = 3.0 mAdc) MMBT2369A –– –– 0.25
(I C = 100mAdc, I B = 10 mAdc) MMBT2369A –– –– 0.50
Base–Emitter Saturation Voltage V
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT2369A 0.7 –– 0.85
(I C = 10 mAdc, I B = 1.0 mAdc,
T A= – 55°C
) MMBT2369A –– –– 1.02
(I C = 30 mAdc, I B = 3.0 mAdc) MMBT2369A –– –– 1.15
(I C = 100 mAdc, I B = 10 mAdc) MMBT2369A –– –– 1.60
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain
(V CE=10 Vdc, I C = 10 mAdc, f = 100 MHz)
C
obo
h
fe
–– –– 4.0 pF
5.0 — — —
SWITCHING CHARACTERISTICS
Storage Time
(I
= I
= I C = 10 mAdc)
B1
B2
Turn–On Time
(V
= 3.0 Vdc, I C = 10 mAdc, I
CC
Turn–Off T ime
(V
= 3.0 Vdc, I C = 10 mAdc, I
CC
= 3.0 mAdc)
B1
= 3.0 mAdc, I
B1
= 1.5 mAdc)
B2
t
s
t
on
t
off
— 5.0 13 ns
— 8.0 12 ns
—1018ns
––
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
O6–2/5
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