LRC MMBT2222ALT1, MMBT2222LT1 Datasheet
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
1
BASE
MAXIMUM RATINGS
3
COLLECTOR
2
EMITTER
Rating Symbol 2222 2222A Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
30 40 Vdc
60 75 Vdc
5.0 6.0 Vdc
600 600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
556 °C/W
300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
417 °C/W
–55 to +150 °C
DEVICE MARKING
MMBT2222LT1
MMBT2222ALT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P;
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage MMBT2222 V
(BR)CEO
(I C = 10 mAdc, I B = 0) MMBT2222A 40 ––
Collector–Base Breakdown Voltage MMBT2222 V
(BR)CBO
(I C = 10 µAdc, I E = 0) MMBT2222A 75
Emitter–Base Breakdown Voltage MMBT2222 V
(BR)EBO
(I E = 10 µAdc, I C = 0) MMBT2222A 6.0 ––
Collector Cutoff Current MMBT2222A I
( V CE = 60 Vdc, I
EB(off)
= 3.0Vdc)
Collector Cutoff Current I
(V
= 50 Vdc, I E = 0) MMBT2222 –– 0.01
CB
(V
= 60 Vdc, I E = 0) MMBT2222A –– 0.01
CB
(V
= 50 Vdc, I E = 0, T A = 125°C) MMBT2222 –– 10
CB
(V
= 60 Vdc, I E = 0, T A = 125°C) MMBT2222A –– 10
CB
CEX
CBO
Emitter Cutoff Current
(V
= 3.0 Vdc, I C = 0) MMBT2222A I
EB
EBO
Base Cutoff Current
(V
= 60 Vdc, V
CE
= 3.0 Vdc) MMBT2222A I
EB(off)
BL
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
30 — Vdc
60 — Vdc
5.0 — Vdc
— 10 nAdc
— 100 nAdc
— 20 nAdc
µAdc
O4–1/5
LESHAN RADIO COMPANY, LTD.
MMBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain h
(I C = 0.1 mAdc, V
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
(I C = 10 mAdc, V
(I C = 150 mAdc, V
(I C = 150 mAdc, V
(I C = 500 mAdc, V
= 10 Vdc) 35 ––
CE
= 10 Vdc) 50 ––
CE
= 10 Vdc) 75 —
CE
= 10 Vdc,T A= –55°C )
CE
= 10 Vdc) (3) 100 300
CE
= 1.0 Vdc) (3) 50 ––
CE
= 10 Vdc)(3) MMBT2222 30 ––
CE
MMBT2222A only 35 —
MMBT2222A 40 —
Collector–Emitter Saturation Voltage(3) V
(I C = 150 mAdc, I B = 15 mAdc) MMBT2222 –– 0.4
MMBT2222A –– 0.3
(I C = 500mAdc, I B = 50 mAdc) MMBT2222 –– 1.6
MMBT2222A –– 1.0
Base–Emitter Saturation Voltage V
(I C = 150 mAdc, I B = 15 mAdc) MMBT2222 –– 1.3
MMBT2222A 0.6 1.2
(I C = 500 mAdc, I B = 50 mAdc) MMBT2222 –– 2.6
MMBT2222A –– 2.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4) MMBT2222 f
(I C = 20mAdc, V CE= 20Vdc, f = 100MHz) MMBT2222A 300 ––
Output Capacitance
Input Capacitance MMBT2222 C
(V
= 0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT2222A –– 25
EB
Input Impedance
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A 0.25 1.25
Voltage Feedback Ratio
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A — 4.0
Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz)
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A 75 375
Output Admittance
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A 25 200
Curren Base Time Comstant
(V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz) MMBT2222A rb, C
Noise Figure
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz)
(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz)
(VCE=10Vdc, IC=100µAdc, RS=1.0kΩ, f =1.0kHz)
MMBT2222A h
MMBT2222A h
MMBT2222A h
MMBT2222A h
MMBT2222A NF –– 4.0 dB
FE
CE(sat)
BE(sat)
C
T
obo
ibo
ie
re
fe
oe
250 –– MHz
–– 8.0 pF
–– 30 pF
2.0 8.0 kΩ
–- 8.0 X 10
50 300 —
5.0 35 µmhos
C
–– 150 ps
––
Vdc
Vdc
–4
SWITCHING CHARACTERISTICS
Delay Time (V
Rise Time I C = 150 mAdc, I
Storage Time (V
Fall Time I
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
4.f T is defined as the frequency at which h
= 30 Vdc, V
CC
= 30 Vdc, I C = 150 mAdc t
CC
= I
= 15 mAdc) t
B1
B2
= – 0.5 Vdc t
EB(off)
= 15 mAdc) t
B1
extrapolates to unity.
fe
d
r
s
f
—10
—25ns
— 225 ns
—60
O4–2/5
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