LRC MMBT2222AWT1 Datasheet
Preliminary Information
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
These transistors are designed for general
purpose amplifier applications. They are
housed in the SOT–323/SC–70 package which
is designed for low power surface mount
applications.
1
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
40 Vdc
75 Vdc
6.0 Vdc
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
T otal Device Dissipation FR– 5 Board,
TA = 25°C
Thermal Resistance Junction to Ambient R
Junction and Storage T emperature TJ , T
P
D
θJA
–55 to +150 °C
stg
3
COLLECTOR
2
EMITTER
150 mW
833 °C/W
MMBT2222AWT1
3
1
2
CASE 419–02, STYLE 3
SOT–323 /SC – 70
DEVICE MARKING
MMBT2222AWT1 = 1P
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(I C = 1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Base Cutoff Current
(V
= 60 Vdc, V
CE
Collector Cutoff Current
(V
= 60 Vdc, V
CE
1. Pulse T est: Pulse W idth<300 µs, Duty Cycle<2.0%.
= 0)
E
EB
EB
= 3.0 Vdc)
= 3.0 Vdc)
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
BL
I
CEX
40 — Vdc
75 — Vdc
6.0 — Vdc
— 20 nAdc
— 10 nAdc
K1–1/2
LESHAN RADIO COMPANY, LTD.
MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (1)
DC Current Gain (1) h
(I C = 0.1 mAdc, V
(I C = 1.0 mAdc, V
(I C = 10 mAdc, V
(I C = 150 mAdc, V
(I C = 500 mAdc, V
= 10 Vdc) 35 ––
CE
= 10 Vdc) 50 ––
CE
= 10 Vdc) 75 ––
CE
= 10 Vdc) 100 —
CE
= 10 Vdc) 40 ––
CE
Collector–Emitter Saturation Voltage(1) V
(I C = 150 mAdc, I B = 15 mAdc) –– 0.3
(I C = 500 mAdc, I B = 50 mAdc) –– 1.0
Base–Emitter Saturation Voltage(1) V
(I C = 150 mAdc, I B = 15 mAdc) 0.6 1.2
(I C = 500 mAdc, I B = 50 mAdc) –– 2.0
FE
CE(sat)
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 20 mAdc, V CE= 20Vdc, f = 100 MHz)
Output Capacitance
(V CB= 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V
= 0.5 Vdc, I C = 0, f = 1.0 MHz)
EB
Input Impedance
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Output Admittance
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Noise Figure
(V CE= 10 Vdc, I C = 100 µAdc, R S= 1.0 kΩ, f = 1.0 kHz)
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF –– 4.0 dB
––
Vdc
Vdc
300 –– MHz
–– 8.0 pF
–– 30 pF
0.25 1.25 k Ω
–– 4.0 X 10
75 375 —
25 200 µmhos
–4
SWITCHING CHARACTERISTICS
Delay Time (V
Rise Time I C = 150 mAdc, I
Storage Time (V
Fall Time I
1. Pulse T est: Pulse W idth <300 µs, Duty Cycle <2.0%.
= 3.0 Vdc, V BE= – 0.5 Vdc t
CC
= 15 mAdc) t
B1
= 30 Vdc, I C = 150 mAdc t
CC
= I
= 15 mAdc) t
B1
B2
d
r
s
f
—10
—25ns
— 225 ns
—60
K1–2/2
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