LRC MMBD914LT1 Datasheet
High-Speed Switching Diode
LESHAN RADIO COMPANY, LTD.
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
FM(surge)
R
F
100 Vdc
200 mAdc
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board
T A = 25°C
Derate ab ove 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation P
Alumina Substrate,
(2)
T A = 25°C
Derate ab ove 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T
(1)
P
D
θ JA
D
θ JA
stg
225 m W
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBD914LT1
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
DEVICE MARKING
MMBD914LT1 = 5D
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
= 100 µAdc)
R
Reverse Voltage Leakage Current I
(V R = 20 Vdc) — 25 nAdc
(V R = 75 Vdc) — 5.0 µAdc
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 10 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)
R
C
T
V
F
t
rr
100 — Vdc
— 4.0 pF
— 1.0 Vdc
— 4.0 ns
G19–1/2
LESHAN RADIO COMPANY, LTD.
MMBD914LT1
+10 V
820 Ω
2.0 k
100 µH
0.1 µF
I
F
DUT
50 Ω OUTPUT
PULSE
GENERAT OR
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t p » t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
T
= 85°C
A
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
T
A
T A= –40°C
= 25°C
0.1µF
50 Ω INPUT
SAMPLING
t
r
INPUT SIGNAL
V
R
is equal to 10mA.
R(peak)
0.01
, REVERSE CURRENT ( µA)
R
I
0.001
I
t
t
p
10%
90%
10
1.0
0.1
01020304050
F
I
R
T
=150°C
A
T A =125°C
=85°C
T
A
T
=55°C
A
T
=25°C
A
t
rr
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i
R(REC)
i
= 1.0 mA
R(REC)
= 1.0 mA)
t
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.68
0.64
0.60
0.56
, DIODE CAPACITANCE (pF)
D
C
0.52
0 2.0 4.0 6.0 8.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
G19–2/2
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