LRC MMBD770T1, MMBD330T1, MMBD110T1 Datasheet

Schottky Barrier Diodes

LESHAN RADIO COMPANY, LTD.

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF

detector applications. Readily available to many other fast switching RF and digital

MMBD110T1
MMBD330T1

applications. They are housed in the SOT–323/SC–70 package which is designed for
low–power surface mount applications.

MMBD770T1

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• Available in 8 mm Tape and Reel

DEVICE MARKING

MMBD110T1 = 4M MMBD330T1 = 4T MMBD770T1 = 5H

MAXIMUM RA TINGS

Rating Symbol Value Unit

Reverse Voltage MMBD110T1 V

R

7.0 Vdc
MMBD330T1 30
MMBD770T1 70

Forward Power Dissipation P
T

= 25°C

A

Junction Temperature T
Storage Temperature Range T

F

J

stg

120 mW

–55 to +125 °C

–55 to +150 °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage V

(I

= 10 µA) MMBD110T1 7.0 10 —

R

(BR)R

MMBD330T1 30 — —
MMBD770T1 70 — —

Diode Capacitance C

(V

= 0, f = 1.0 MHZ, Note 1) MMBD110T1 — 0.88 1.0

R

T

(VR = 15 Volts, f = 1.0 MHZ) MMBD330T1 — 0.9 1.5
(V

= 20 Volts, f = 1.0 MHZ) MMBD770T1 — 0.5 1.0

R

Reverse Leakage I

(V

= 3.0 V) MMBD110T1 — 20 250

R

R

(VR = 25 V) MMBD330T1 — 13 200
(V

= 35 V) MMBD770T1 — 9.0 200

R

Noise Figure NF dB
(f = 1.0 GHz, Note 2) MMBD110T1 — 6.0 —
Forward Voltage V
(I

= 10 mA) MMBD110T1 — 0.5 0.6

F

(I

= 1.0 mAdc) MMBD330T1 — 0.38 0.45

F

(I

= 10 mA) — 0.52 0.6

F

F

(IF = 1.0 mAdc) MMBD770T1 — 0.42 0.5
(I

= 10 mA) — 0.7 1.0

F

3

1

2

CASE 419–02, STYLE 2

SOT–323 /SC – 70

Volts

pF

nAdc

Vdc

MMBD110. 330. 770T1–1/4

LESHAN RADIO COMPANY, LTD.

TYPICAL CHARACTERISTICS

MMBD110T1

Figure 1. Reverse Leakage

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

Figure 3. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Noise Figure

PLO, LOCAL OSCILLATOR POWER (mW)

C, CAPACITANCE (pF)

NF, NOISE FIGURE (dB) , FORWARD CURRENT (mA)I

F

, REVERSE LEAKAGE ( A)I

R

m

0.1 0.2 0.5 1.0 2.0 5.0 10

11

10

9
8
7
6
5
4
3
2

1

0 1.0 2.0 3.0 4.0

1.0

0.9

0.8

0.7

0.6

0.3 0.4 0.5 0.6

100

10

1.0

0.1

0.7 0.830 40 50 60 70 80 100

1.0

130110 12090

0.7

0.5

0.2

0.1

0.07

0.05

0.02

0.01

VR = 3.0 Vdc

LOCAL OSCILLATOR FREQUENCY = 1.0 GHz

(Test Circuit Figure 5)

TA = –40°C

TA = 85°C

TA = 25°C

MMBD110T1

MMBD110T1

MMBD110T1

MMBD110T1

MMBD110T1 MMBD330T1 MMBD770T1

Figure 5. Noise Figure Test Circui

Note 1 — CC and CT are measured using a capacitance bridge

Note 2 — Noise figure measured with diode under test in tuned

NOTES ON TESTING AND SPECIFICATIONS

(Boonton Electronics Model 75A or equivalent).

diode mount using UHF noise source and local oscillator (LO)
frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW.
IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5

MMBD110. 330. 770T1–2/4